Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)

Minoru Tachiki, Toyokatsu Fujisaki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Heteroepitaxial (001)diamond films are successfully grown on high-quality (001)Ir/(001)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used in the bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in the <001> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveal the epitaxial ordering of the deposited film over a 2-3 mm2 area. (2×1) reconstructed structure patterns have also been observed which indicates that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10 μm2 area as revealed by atomic force microscopy observations.

Original languageEnglish
Pages (from-to)333-341
Number of pages9
JournalNew Diamond and Frontier Carbon Technology
Volume12
Issue number6
Publication statusPublished - 2002 Jan 1

Keywords

  • Antenna edge
  • Chemical vapor deposition
  • Diamond
  • Heteroepitaxial growth
  • Iridium

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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