Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)

Minoru Tachiki; Toyokatsu Fujisaki; Norikazu Taniyama; Minoru Kudo; Hiroshi Kawarada

Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)

Minoru Tachiki, Toyokatsu Fujisaki, Norikazu Taniyama, Minoru Kudo, Hiroshi Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Heteroepitaxial (001)diamond films are successfully grown on high-quality (001)Ir/(001)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used in the bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in the <001> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveal the epitaxial ordering of the deposited film over a 2-3 mm² area. (2×1) reconstructed structure patterns have also been observed which indicates that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10 μm² area as revealed by atomic force microscopy observations.

Original language	English
Pages (from-to)	333-341
Number of pages	9
Journal	New Diamond and Frontier Carbon Technology
Volume	12
Issue number	6
Publication status	Published - 2002

Keywords

Antenna edge
Chemical vapor deposition
Diamond
Heteroepitaxial growth
Iridium

ASJC Scopus subject areas

Materials Science(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

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title = "Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)",

abstract = "Heteroepitaxial (001)diamond films are successfully grown on high-quality (001)Ir/(001)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used in the bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in the <001> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveal the epitaxial ordering of the deposited film over a 2-3 mm2 area. (2×1) reconstructed structure patterns have also been observed which indicates that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10 μm2 area as revealed by atomic force microscopy observations.",

keywords = "Antenna edge, Chemical vapor deposition, Diamond, Heteroepitaxial growth, Iridium",

author = "Minoru Tachiki and Toyokatsu Fujisaki and Norikazu Taniyama and Minoru Kudo and Hiroshi Kawarada",

year = "2002",

language = "English",

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T1 - Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)

AU - Tachiki, Minoru

AU - Fujisaki, Toyokatsu

AU - Taniyama, Norikazu

AU - Kudo, Minoru

AU - Kawarada, Hiroshi

PY - 2002

Y1 - 2002

N2 - Heteroepitaxial (001)diamond films are successfully grown on high-quality (001)Ir/(001)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used in the bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in the <001> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveal the epitaxial ordering of the deposited film over a 2-3 mm2 area. (2×1) reconstructed structure patterns have also been observed which indicates that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10 μm2 area as revealed by atomic force microscopy observations.

AB - Heteroepitaxial (001)diamond films are successfully grown on high-quality (001)Ir/(001)MgO substrates. To enhance the epitaxial nucleation and growth of the diamond, antenna-edge microwave plasma chemical vapor deposition (MPCVD) has been used in the bias enhanced nucleation step. Subsequently, the diamond growth step is performed using conventional MPCVD in the <001> fast growth mode. Scanning electron microscope (SEM) observation and reflection high-energy electron diffraction (RHEED) reveal the epitaxial ordering of the deposited film over a 2-3 mm2 area. (2×1) reconstructed structure patterns have also been observed which indicates that the surface of the diamond film is very smooth. The mean roughness is less than 2 nm in a 10 μm2 area as revealed by atomic force microscopy observations.

KW - Antenna edge

KW - Chemical vapor deposition

KW - Diamond

KW - Heteroepitaxial growth

KW - Iridium

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Heteroepitaxial diamond thin film growth on Ir(001)/MgO(001) substrate by antenna-edge plasma assisted chemical vapor deposition (St. Elmo CVD)

Abstract

Keywords

ASJC Scopus subject areas

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