Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers

Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo

Research output: Contribution to journalArticle

Abstract

We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-μm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metalorganic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.

Original languageEnglish
Pages (from-to)537-544
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE101C
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1
Externally publishedYes

Keywords

  • Ge buffer
  • Heteroepitaxial growth
  • MOVPE
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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