Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers

Ryo Nakao, Masakazu Arai, Takaaki Kakitsuka, Shinji Matsuo

Research output: Contribution to journalArticle

Abstract

We demonstrate heteroepitaxial growth of GaAs/Ge buffer layers for fabricating 1.3-μm range metamorphic InGaAs-based multiple quantum well (MQW) lasers in which the Ge buffer layer is grown using a metal-organic Ge precursor, iso-butyl germane, in a conventional metalorganic vapor phase epitaxy reactor. This enables us to grow Ge and GaAs buffer layers in the same reactor seamlessly. Transmission electron microscopy and X-ray diffraction analyses indicate that dislocations are well confined at the Ge/Si interface. Furthermore, thermal-cycle annealing significantly improves crystalline quality at the GaAs/Ge interface, resulting in higher photoluminescence intensity from the MQWs on the buffer layers.

Original languageEnglish
Pages (from-to)537-544
Number of pages8
JournalIEICE Transactions on Electronics
VolumeE101C
Issue number7
DOIs
Publication statusPublished - 2018 Jul 1
Externally publishedYes

Fingerprint

Buffer layers
Epitaxial growth
Lasers
Quantum well lasers
Metallorganic vapor phase epitaxy
Semiconductor quantum wells
Photoluminescence
Metals
Annealing
Crystalline materials
Transmission electron microscopy
X ray diffraction
gallium arsenide

Keywords

  • Ge buffer
  • Heteroepitaxial growth
  • MOVPE
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers. / Nakao, Ryo; Arai, Masakazu; Kakitsuka, Takaaki; Matsuo, Shinji.

In: IEICE Transactions on Electronics, Vol. E101C, No. 7, 01.07.2018, p. 537-544.

Research output: Contribution to journalArticle

Nakao, Ryo ; Arai, Masakazu ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Heteroepitaxial growth of GaAs/Ge buffer layer on Si for metamorphic InGaAs lasers. In: IEICE Transactions on Electronics. 2018 ; Vol. E101C, No. 7. pp. 537-544.
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