HETEROEPITAXIAL GROWTH OF GaP ON SILICON BY MOLECULAR BEAM EPITAXY.

Shun ichi Gonda, Yuichi Matsushima, Seiji Mukai, Yunosuke Makita, Osamu Igarashi

Research output: Chapter in Book/Report/Conference proceedingChapter

20 Citations (Scopus)

Abstract

Heteroepitaxial GaP layers were grown on Si substrates, misoriented by 5 degree from the (111) face toward the left bracket 100 right bracket axis, by molecular beam epitaxy (MBE). The RHEED pattern of GaP is of elongated streaks, indicating that the quality of the grown layers is good. From observation by the X-ray divergent beam method, the left bracket 111 right bracket axis of the grown layers is parallel to that of the substrate. Autodoping of Si into the epitaxial layers from the substrate is very small compared with the layers grown by CVD. Photoluminescence was measured for GaP on Si which was irradiated with an ionized nitrogen beam during MBE.

Original languageEnglish
Title of host publicationJpn J Appl Phys
Pages1043-1048
Number of pages6
Volume17
Edition6
Publication statusPublished - 1978 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)

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