Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide

Hiroshi Kawarada, C. Wild, N. Herres, R. Locher, P. Koidl, H. Nagasawa

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

We have deposited epitaxial diamond films with very low angular spread on epitaxial β-phase silicon carbide layers on silicon (001) substrates. From x-ray rocking curve measurements, half-widths of the angular spread of the crystal orientation as low as 0.6° have been determined, which is the smallest value ever reported in heteroepitaxial diamond films and appears to be smaller than those of the β-phase silicon carbide underlayers. The film surface exhibits a roughness of about 100 nm with very few discernible boundaries due to misorientation. The optimization of the bias-enhanced nucleation process and the control of selective growth are the main factors for the improvement of the crystallinity.

Original languageEnglish
Pages (from-to)3490-3493
Number of pages4
JournalJournal of Applied Physics
Volume81
Issue number8
Publication statusPublished - 1997 Apr 15
Externally publishedYes

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diamond films
silicon carbides
diamonds
misalignment
crystallinity
roughness
nucleation
optimization
silicon
curves
crystals
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Kawarada, H., Wild, C., Herres, N., Locher, R., Koidl, P., & Nagasawa, H. (1997). Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide. Journal of Applied Physics, 81(8), 3490-3493.

Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide. / Kawarada, Hiroshi; Wild, C.; Herres, N.; Locher, R.; Koidl, P.; Nagasawa, H.

In: Journal of Applied Physics, Vol. 81, No. 8, 15.04.1997, p. 3490-3493.

Research output: Contribution to journalArticle

Kawarada, H, Wild, C, Herres, N, Locher, R, Koidl, P & Nagasawa, H 1997, 'Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide', Journal of Applied Physics, vol. 81, no. 8, pp. 3490-3493.
Kawarada H, Wild C, Herres N, Locher R, Koidl P, Nagasawa H. Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide. Journal of Applied Physics. 1997 Apr 15;81(8):3490-3493.
Kawarada, Hiroshi ; Wild, C. ; Herres, N. ; Locher, R. ; Koidl, P. ; Nagasawa, H. / Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide. In: Journal of Applied Physics. 1997 ; Vol. 81, No. 8. pp. 3490-3493.
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