Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

Hiroshi Kawarada, T. Suesada, H. Nagasawa

    Research output: Contribution to journal › Article

    91 Citations (Scopus)

    Abstract

    Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.

    Original languageEnglish
    Pages (from-to)583
    Number of pages1
    JournalApplied Physics Letters
    DOIs
    Publication statusPublished - 1995

    Fingerprint

    silicon carbides
    buffers
    diamonds
    silicon
    thin films
    nucleation
    diamond films
    smoothing
    surface energy
    adjusting

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers. / Kawarada, Hiroshi; Suesada, T.; Nagasawa, H.

    In: Applied Physics Letters, 1995, p. 583.

    Research output: Contribution to journal › Article

    Kawarada, H, Suesada, T & Nagasawa, H 1995, 'Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers', Applied Physics Letters, pp. 583. https://doi.org/10.1063/1.114020
    Kawarada H, Suesada T, Nagasawa H. Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers. Applied Physics Letters. 1995;583. https://doi.org/10.1063/1.114020
    Kawarada, Hiroshi ; Suesada, T. ; Nagasawa, H. / Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers. In: Applied Physics Letters. 1995 ; pp. 583.
    @article{9532250f4d734a5daed161df2dd27712,
    title = "Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers",
    abstract = "Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.",
    author = "Hiroshi Kawarada and T. Suesada and H. Nagasawa",
    year = "1995",
    doi = "10.1063/1.114020",
    language = "English",
    pages = "583",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",

    }

    TY - JOUR

    T1 - Heteroepitaxial growth of smooth and continuous diamond thin films on silicon substrates via high quality silicon carbide buffer layers

    AU - Kawarada, Hiroshi

    AU - Suesada, T.

    AU - Nagasawa, H.

    PY - 1995

    Y1 - 1995

    N2 - Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.

    AB - Smooth and continuous diamond films have been heteroepitaxially grown on β-type silicon carbide (β-SiC) (001) surfaces. The smooth films can be obtained in the thickness of less than 6 μm which is the smallest in heteroepitaxial diamonds. The epitaxial growth is composed of three steps; (i) Bias enhanced nucleation on β-SiC (001) grown on silicon (001), (ii) 〈001〉 fast growth mode for the selection of epitaxially oriented particles, and (iii) 〈111〉 fast growth mode for the smoothing of (001) surface. High quality silicon carbide (001) surface is effective for oriented diamond nucleation. The winnowing process of oriented particles and the surface adjustment are due to the high surface energy of diamond.

    UR - http://www.scopus.com/inward/record.url?scp=36449009147&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=36449009147&partnerID=8YFLogxK

    U2 - 10.1063/1.114020

    DO - 10.1063/1.114020

    M3 - Article

    SP - 583

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    ER -

    Access to Document