Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition

Masahiro Katoh, Hiroshi Kawarada

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (000l)WC//(110)W in the alignment [1210]WC//[111]W.

Original languageEnglish
Pages (from-to)3628-3630
Number of pages3
JournalJapanese journal of applied physics
Volume34
Issue number7R
DOIs
Publication statusPublished - 1995 Jul

Keywords

  • CVD
  • ECR plasma
  • Heteroepitaxial growth
  • Microwave plasma
  • Tungsten
  • Tungsten carbide

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Heteroepitaxial growth of tungsten carbide films on w(110) by plasma-enhanced chemical vapor deposition'. Together they form a unique fingerprint.

  • Cite this