Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition

Masahiro Katoh, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingChapter

    10 Citations (Scopus)

    Abstract

    Tungsten carbide (WC) layers have been grown epitaxially on tungsten single crystals for the first time by using microwave plasma and electron cyclotron resonance plasma carburization of single-crystalline tungsten. WC on tungsten is grown epitaxially as (0001)WC//(110)W in the alignment [12̄10]WC//[1̄11]W.

    Original languageEnglish
    Title of host publicationJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
    Place of PublicationMinato-ku, Japan
    PublisherJJAP
    Pages3628-3630
    Number of pages3
    Volume34
    Edition7 A
    Publication statusPublished - 1995 Jul

    Fingerprint

    Tungsten carbide
    Plasma enhanced chemical vapor deposition
    Epitaxial growth
    Tungsten
    Plasmas
    Electron cyclotron resonance
    Microwaves
    Single crystals
    Crystalline materials

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Katoh, M., & Kawarada, H. (1995). Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers (7 A ed., Vol. 34, pp. 3628-3630). Minato-ku, Japan: JJAP.

    Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition. / Katoh, Masahiro; Kawarada, Hiroshi.

    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 7 A. ed. Minato-ku, Japan : JJAP, 1995. p. 3628-3630.

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Katoh, M & Kawarada, H 1995, Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition. in Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 7 A edn, vol. 34, JJAP, Minato-ku, Japan, pp. 3628-3630.
    Katoh M, Kawarada H. Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition. In Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. 7 A ed. Vol. 34. Minato-ku, Japan: JJAP. 1995. p. 3628-3630
    Katoh, Masahiro ; Kawarada, Hiroshi. / Heteroepitaxial growth of tungsten carbide films on W(110) by plasma-enhanced chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 7 A. ed. Minato-ku, Japan : JJAP, 1995. pp. 3628-3630
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