Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

D. J. Olego, M. Tamura, Y. Okuno, Toshihiro Kawano, A. Hashimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

Original languageEnglish
Pages (from-to)4329-4332
Number of pages4
JournalJournal of Applied Physics
Volume71
Issue number9
DOIs
Publication statusPublished - 1992
Externally publishedYes

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metalorganic chemical vapor deposition
molecular beam epitaxy
buffers
interlayers
x ray diffraction
photoluminescence
transmission electron microscopy
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy. / Olego, D. J.; Tamura, M.; Okuno, Y.; Kawano, Toshihiro; Hashimoto, A.

In: Journal of Applied Physics, Vol. 71, No. 9, 1992, p. 4329-4332.

Research output: Contribution to journalArticle

@article{cb91fd1b50c34b358ff4dc934a60eee2,
title = "Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy",
abstract = "Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.",
author = "Olego, {D. J.} and M. Tamura and Y. Okuno and Toshihiro Kawano and A. Hashimoto",
year = "1992",
doi = "10.1063/1.350814",
language = "English",
volume = "71",
pages = "4329--4332",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

AU - Olego, D. J.

AU - Tamura, M.

AU - Okuno, Y.

AU - Kawano, Toshihiro

AU - Hashimoto, A.

PY - 1992

Y1 - 1992

N2 - Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

AB - Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

UR - http://www.scopus.com/inward/record.url?scp=0009431435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0009431435&partnerID=8YFLogxK

U2 - 10.1063/1.350814

DO - 10.1063/1.350814

M3 - Article

VL - 71

SP - 4329

EP - 4332

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -