Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy

D. J. Olego, M. Tamura, Y. Okuno, T. Kawano, A. Hashimoto

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Abstract

Heteroepitaxial InP layers were grown by metalorganic chemical vapor deposition on novel GaAs buffer layers on Si substrates. The GaAs buffers were prepared by molecular beam epitaxy and show a reduced threading dislocation density achieved by inserting one nanometer thick Si interlayers. The structural and optoelectronic properties of the heteroepitaxial InP layers, which were investigated by transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy, show improvements attributed to the optimized GaAs buffer layers.

Original languageEnglish
Pages (from-to)4329-4332
Number of pages4
JournalJournal of Applied Physics
Volume71
Issue number9
DOIs
Publication statusPublished - 1992 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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