Heterogeneous integration of III-V semiconductors on Si photonics platform

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, H. Nishi, Takaaki Kakitsuka, H. Fukuda, T. Tsuchizawa, S. Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper reviews development of heterogeneously integrated photonic devices on a Si platform for optical transceivers. III-V/Si laser diodes and Mach-Zehnder modulators can be fabricated using a direct wafer bonding method and show 4.6-mW output power and a VL of 0.09 Vcm on silicon-on-insulator wafers. In addition, moderate refractive-index SiOx and SiOxNy waveguides can be fabricated with a low-temperature backend process; they have a low-crosstalk (<-27 dB) and can be used to make polarization-insensitive wavelength filters on the Si platform.

Original languageEnglish
Title of host publicationECS Transactions
EditorsJean-Michel Hartmann, Aaron Thean, Atsushi Ogura, Xiao Gong, David Harame, Matty Caymax, G. Niu, Andreas Schulze, Qizhi Liu, G. Mashi, Seiichi Miyazaki, Andreas Mai, Mikael Osting
PublisherElectrochemical Society Inc.
Pages11-16
Number of pages6
Edition7
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2018 Jan 1
Externally publishedYes
Event8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting - Cancun, Mexico
Duration: 2018 Sep 302018 Oct 4

Publication series

NameECS Transactions
Number7
Volume86
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other8th Symposium on SiGe, Ge, and Related Compounds: Materials, Processing, and Devices - AiMES 2018, ECS and SMEQ Joint International Meeting
CountryMexico
CityCancun
Period18/9/3018/10/4

ASJC Scopus subject areas

  • Engineering(all)

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