Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A heterogeneously integrated metal-oxide-semiconductor capacitor Mach-Zehnder modulator with an n-type InGaAsP layer shows VπL of 0.09 Vcm. It overcomes the VπL limit of conventional Si modulators without degrading the optical loss.

Original languageEnglish
Title of host publication23rd Opto-Electronics and Communications Conference, OECC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538691458
DOIs
Publication statusPublished - 2018 Jul
Externally publishedYes
Event23rd Opto-Electronics and Communications Conference, OECC 2018 - Jeju, Korea, Republic of
Duration: 2018 Jul 22018 Jul 6

Publication series

Name23rd Opto-Electronics and Communications Conference, OECC 2018

Conference

Conference23rd Opto-Electronics and Communications Conference, OECC 2018
CountryKorea, Republic of
CityJeju
Period18/7/218/7/6

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Hiraki, T., Aihara, T., Hasebe, K., Fujii, T., Takeda, K., Tsuchizawa, T., Kakitsuka, T., Fukuda, H., & Matsuo, S. (2018). Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator. In 23rd Opto-Electronics and Communications Conference, OECC 2018 [8730095] (23rd Opto-Electronics and Communications Conference, OECC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/OECC.2018.8730095