Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

T. Hiraki; T. Aihara; K. Hasebe; T. Fujii; K. Takeda; T. Tsuchizawa; T. Kakitsuka; H. Fukuda; S. Matsuo

doi:10.1109/OECC.2018.8730095

Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

T. Hiraki, T. Aihara, K. Hasebe, T. Fujii, K. Takeda, T. Tsuchizawa, T. Kakitsuka, H. Fukuda, S. Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A heterogeneously integrated metal-oxide-semiconductor capacitor Mach-Zehnder modulator with an n-type InGaAsP layer shows V_πL of 0.09 Vcm. It overcomes the V_πL limit of conventional Si modulators without degrading the optical loss.

Original language	English
Title of host publication	23rd Opto-Electronics and Communications Conference, OECC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781538691458
DOIs	https://doi.org/10.1109/OECC.2018.8730095
Publication status	Published - 2018 Jul
Externally published	Yes
Event	23rd Opto-Electronics and Communications Conference, OECC 2018 - Jeju, Korea, Republic of Duration: 2018 Jul 2 → 2018 Jul 6

Publication series

Name	23rd Opto-Electronics and Communications Conference, OECC 2018

Conference

Conference	23rd Opto-Electronics and Communications Conference, OECC 2018
Country/Territory	Korea, Republic of
City	Jeju
Period	18/7/2 → 18/7/6

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/OECC.2018.8730095

Cite this

Hiraki, T., Aihara, T., Hasebe, K., Fujii, T., Takeda, K., Tsuchizawa, T., Kakitsuka, T., Fukuda, H., & Matsuo, S. (2018). Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator. In 23rd Opto-Electronics and Communications Conference, OECC 2018 [8730095] (23rd Opto-Electronics and Communications Conference, OECC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/OECC.2018.8730095

Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator. / Hiraki, T.; Aihara, T.; Hasebe, K. et al.

23rd Opto-Electronics and Communications Conference, OECC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8730095 (23rd Opto-Electronics and Communications Conference, OECC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hiraki, T, Aihara, T, Hasebe, K, Fujii, T, Takeda, K, Tsuchizawa, T, Kakitsuka, T, Fukuda, H & Matsuo, S 2018, Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator. in 23rd Opto-Electronics and Communications Conference, OECC 2018., 8730095, 23rd Opto-Electronics and Communications Conference, OECC 2018, Institute of Electrical and Electronics Engineers Inc., 23rd Opto-Electronics and Communications Conference, OECC 2018, Jeju, Korea, Republic of, 18/7/2. https://doi.org/10.1109/OECC.2018.8730095

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title = "Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator",

abstract = "A heterogeneously integrated metal-oxide-semiconductor capacitor Mach-Zehnder modulator with an n-type InGaAsP layer shows VπL of 0.09 Vcm. It overcomes the VπL limit of conventional Si modulators without degrading the optical loss.",

author = "T. Hiraki and T. Aihara and K. Hasebe and T. Fujii and K. Takeda and T. Tsuchizawa and T. Kakitsuka and H. Fukuda and S. Matsuo",

year = "2018",

month = jul,

doi = "10.1109/OECC.2018.8730095",

language = "English",

series = "23rd Opto-Electronics and Communications Conference, OECC 2018",

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AU - Hiraki, T.

AU - Aihara, T.

AU - Hasebe, K.

AU - Fujii, T.

AU - Takeda, K.

AU - Tsuchizawa, T.

AU - Kakitsuka, T.

AU - Fukuda, H.

AU - Matsuo, S.

PY - 2018/7

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N2 - A heterogeneously integrated metal-oxide-semiconductor capacitor Mach-Zehnder modulator with an n-type InGaAsP layer shows VπL of 0.09 Vcm. It overcomes the VπL limit of conventional Si modulators without degrading the optical loss.

AB - A heterogeneously integrated metal-oxide-semiconductor capacitor Mach-Zehnder modulator with an n-type InGaAsP layer shows VπL of 0.09 Vcm. It overcomes the VπL limit of conventional Si modulators without degrading the optical loss.

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M3 - Conference contribution

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T3 - 23rd Opto-Electronics and Communications Conference, OECC 2018

BT - 23rd Opto-Electronics and Communications Conference, OECC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 23rd Opto-Electronics and Communications Conference, OECC 2018

Y2 - 2 July 2018 through 6 July 2018

ER -

Heterogeneously Integrated III-V/Si Mach-Zehnder Modulator

Abstract

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ASJC Scopus subject areas

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