Abstract
Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.
| Original language | English |
|---|---|
| Pages (from-to) | 482-485 |
| Number of pages | 4 |
| Journal | Nature Photonics |
| Volume | 11 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2017 Aug 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Cite this
Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator. / Hiraki, Tatsurou; Aihara, Takuma; Hasebe, Koichi; Takeda, Koji; Fujii, Takuro; Kakitsuka, Takaaki; Tsuchizawa, Tai; Fukuda, Hiroshi; Matsuo, Shinji.
In: Nature Photonics, Vol. 11, No. 8, 01.08.2017, p. 482-485.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator
AU - Hiraki, Tatsurou
AU - Aihara, Takuma
AU - Hasebe, Koichi
AU - Takeda, Koji
AU - Fujii, Takuro
AU - Kakitsuka, Takaaki
AU - Tsuchizawa, Tai
AU - Fukuda, Hiroshi
AU - Matsuo, Shinji
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.
AB - Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.
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U2 - 10.1038/nphoton.2017.120
DO - 10.1038/nphoton.2017.120
M3 - Article
AN - SCOPUS:85026666365
VL - 11
SP - 482
EP - 485
JO - Nature Photonics
JF - Nature Photonics
SN - 1749-4885
IS - 8
ER -