Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator

Tatsurou Hiraki, Takuma Aihara, Koichi Hasebe, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Tai Tsuchizawa, Hiroshi Fukuda, Shinji Matsuo

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

Original languageEnglish
Pages (from-to)482-485
Number of pages4
JournalNature Photonics
Volume11
Issue number8
DOIs
Publication statusPublished - 2017 Aug 1
Externally publishedYes

Fingerprint

metal oxide semiconductors
Modulators
Mach number
modulators
capacitors
Capacitors
Metals
Insertion losses
insertion loss
Photonics
Modulation
photonics
modulation
Electron mobility
Phase shifters
Cutoff frequency
Electric potential
electric potential
Silicon
footprints

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Hiraki, T., Aihara, T., Hasebe, K., Takeda, K., Fujii, T., Kakitsuka, T., ... Matsuo, S. (2017). Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator. Nature Photonics, 11(8), 482-485. https://doi.org/10.1038/nphoton.2017.120

Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator. / Hiraki, Tatsurou; Aihara, Takuma; Hasebe, Koichi; Takeda, Koji; Fujii, Takuro; Kakitsuka, Takaaki; Tsuchizawa, Tai; Fukuda, Hiroshi; Matsuo, Shinji.

In: Nature Photonics, Vol. 11, No. 8, 01.08.2017, p. 482-485.

Research output: Contribution to journalArticle

Hiraki, T, Aihara, T, Hasebe, K, Takeda, K, Fujii, T, Kakitsuka, T, Tsuchizawa, T, Fukuda, H & Matsuo, S 2017, 'Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator', Nature Photonics, vol. 11, no. 8, pp. 482-485. https://doi.org/10.1038/nphoton.2017.120
Hiraki, Tatsurou ; Aihara, Takuma ; Hasebe, Koichi ; Takeda, Koji ; Fujii, Takuro ; Kakitsuka, Takaaki ; Tsuchizawa, Tai ; Fukuda, Hiroshi ; Matsuo, Shinji. / Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator. In: Nature Photonics. 2017 ; Vol. 11, No. 8. pp. 482-485.
@article{ac53f57034a84236bc5ea6faaf7acf97,
title = "Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator",
abstract = "Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.",
author = "Tatsurou Hiraki and Takuma Aihara and Koichi Hasebe and Koji Takeda and Takuro Fujii and Takaaki Kakitsuka and Tai Tsuchizawa and Hiroshi Fukuda and Shinji Matsuo",
year = "2017",
month = "8",
day = "1",
doi = "10.1038/nphoton.2017.120",
language = "English",
volume = "11",
pages = "482--485",
journal = "Nature Photonics",
issn = "1749-4885",
publisher = "Nature Publishing Group",
number = "8",

}

TY - JOUR

T1 - Heterogeneously integrated III-V/Si MOS capacitor Mach-Zehnder modulator

AU - Hiraki, Tatsurou

AU - Aihara, Takuma

AU - Hasebe, Koichi

AU - Takeda, Koji

AU - Fujii, Takuro

AU - Kakitsuka, Takaaki

AU - Tsuchizawa, Tai

AU - Fukuda, Hiroshi

AU - Matsuo, Shinji

PY - 2017/8/1

Y1 - 2017/8/1

N2 - Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

AB - Demand for more transmission capacity in data centres is increasing due to the continuous growth of Internet traffic. The introduction of external modulators into datacom networks is essential with advanced modulation formats. However, the large footprint of silicon photonics Mach-Zehnder (MZ) modulators will limit further increases in transmission capacity. To overcome this, we introduce III-V compound semiconductors because the large electron-induced refractive-index change, high electron mobility and low carrier-plasma absorption are beneficial for overcoming the trade-offs among the voltage-length product (V π L), operation speed and insertion loss of Si MZ modulators. Here, we demonstrate an MZ modulator with a 250-μm-long InGaAsP/Si metal-oxide-semiconductor (MOS) capacitor phase-shifter and obtain a V π L of 0.09...Vcm in accumulation mode, an insertion loss of ∼1.0...dB, a cutoff frequency of ∼2.2...GHz in depletion mode and a 32-Gbit...s -1 modulation with signal pre-emphasis. These results are promising for fabricating high-capacity large-scale photonic integrated circuits with low power consumption.

UR - http://www.scopus.com/inward/record.url?scp=85026666365&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85026666365&partnerID=8YFLogxK

U2 - 10.1038/nphoton.2017.120

DO - 10.1038/nphoton.2017.120

M3 - Article

VL - 11

SP - 482

EP - 485

JO - Nature Photonics

JF - Nature Photonics

SN - 1749-4885

IS - 8

ER -