Abstract
We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE Photonics Conference, IPC 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 540-541 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781509019069 |
| DOIs | |
| Publication status | Published - 2017 Jan 23 |
| Externally published | Yes |
| Event | 29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: 2016 Oct 2 → 2016 Oct 6 |
Publication series
| Name | 2016 IEEE Photonics Conference, IPC 2016 |
|---|
Other
| Other | 29th IEEE Photonics Conference, IPC 2016 |
|---|---|
| Country | United States |
| City | Waikoloa |
| Period | 16/10/2 → 16/10/6 |
Fingerprint
Keywords
- direct bonding
- epitaxial growth
- membrane lasers
- silicon photonics
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics
Cite this
Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate . / Fujii, Takuro; Takeda, Koji; Kanno, Erina; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.
2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 540-541 7831220 (2016 IEEE Photonics Conference, IPC 2016).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate
AU - Fujii, Takuro
AU - Takeda, Koji
AU - Kanno, Erina
AU - Hasebe, Koichi
AU - Nishi, Hidetaka
AU - Yamamoto, Tsuyoshi
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2017/1/23
Y1 - 2017/1/23
N2 - We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).
AB - We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).
KW - direct bonding
KW - epitaxial growth
KW - membrane lasers
KW - silicon photonics
UR - http://www.scopus.com/inward/record.url?scp=85014204054&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85014204054&partnerID=8YFLogxK
U2 - 10.1109/IPCon.2016.7831220
DO - 10.1109/IPCon.2016.7831220
M3 - Conference contribution
AN - SCOPUS:85014204054
T3 - 2016 IEEE Photonics Conference, IPC 2016
SP - 540
EP - 541
BT - 2016 IEEE Photonics Conference, IPC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -