Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).

Original languageEnglish
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages540-541
Number of pages2
ISBN (Electronic)9781509019069
DOIs
Publication statusPublished - 2017 Jan 23
Externally publishedYes
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: 2016 Oct 2 → 2016 Oct 6

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Other

Other29th IEEE Photonics Conference, IPC 2016
CountryUnited States
CityWaikoloa
Period16/10/2 → 16/10/6

Fingerprint

Modulation
Membranes
Fibers
Lasers
Substrates
threshold currents
lasers
membranes
modulation
fibers
output

Keywords

  • direct bonding
  • epitaxial growth
  • membrane lasers
  • silicon photonics

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Fujii, T., Takeda, K., Kanno, E., Hasebe, K., Nishi, H., Yamamoto, T., ... Matsuo, S. (2017). Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate In 2016 IEEE Photonics Conference, IPC 2016 (pp. 540-541). [7831220] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831220

Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate . / Fujii, Takuro; Takeda, Koji; Kanno, Erina; Hasebe, Koichi; Nishi, Hidetaka; Yamamoto, Tsuyoshi; Kakitsuka, Takaaki; Matsuo, Shinji.

2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 540-541 7831220 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujii, T, Takeda, K, Kanno, E, Hasebe, K, Nishi, H, Yamamoto, T, Kakitsuka, T & Matsuo, S 2017, Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate in 2016 IEEE Photonics Conference, IPC 2016., 7831220, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 540-541, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 16/10/2. https://doi.org/10.1109/IPCon.2016.7831220
Fujii T, Takeda K, Kanno E, Hasebe K, Nishi H, Yamamoto T et al. Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate In 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 540-541. 7831220. (2016 IEEE Photonics Conference, IPC 2016). https://doi.org/10.1109/IPCon.2016.7831220
Fujii, Takuro ; Takeda, Koji ; Kanno, Erina ; Hasebe, Koichi ; Nishi, Hidetaka ; Yamamoto, Tsuyoshi ; Kakitsuka, Takaaki ; Matsuo, Shinji. / Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 540-541 (2016 IEEE Photonics Conference, IPC 2016).
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abstract = "We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).",
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