Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO 2 /Si substrate

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).

Original languageEnglish
Title of host publication2016 IEEE Photonics Conference, IPC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages540-541
Number of pages2
ISBN (Electronic)9781509019069
DOIs
Publication statusPublished - 2017 Jan 23
Externally publishedYes
Event29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States
Duration: 2016 Oct 22016 Oct 6

Publication series

Name2016 IEEE Photonics Conference, IPC 2016

Other

Other29th IEEE Photonics Conference, IPC 2016
CountryUnited States
CityWaikoloa
Period16/10/216/10/6

Keywords

  • direct bonding
  • epitaxial growth
  • membrane lasers
  • silicon photonics

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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