@inproceedings{4a261c594820426282dd695907b7f6f1,
title = "Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO2/Si substrate",
abstract = "We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).",
keywords = "direct bonding, epitaxial growth, membrane lasers, silicon photonics",
author = "Takuro Fujii and Koji Takeda and Erina Kanno and Koichi Hasebe and Hidetaka Nishi and Tsuyoshi Yamamoto and Takaaki Kakitsuka and Shinji Matsuo",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 29th IEEE Photonics Conference, IPC 2016 ; Conference date: 02-10-2016 Through 06-10-2016",
year = "2017",
month = jan,
day = "23",
doi = "10.1109/IPCon.2016.7831220",
language = "English",
series = "2016 IEEE Photonics Conference, IPC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "540--541",
booktitle = "2016 IEEE Photonics Conference, IPC 2016",
}