Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO2/Si substrate

Takuro Fujii; Koji Takeda; Erina Kanno; Koichi Hasebe; Hidetaka Nishi; Tsuyoshi Yamamoto; Takaaki Kakitsuka; Shinji Matsuo

doi:10.1109/IPCon.2016.7831220

Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate

Takuro Fujii, Koji Takeda, Erina Kanno, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).

Original language	English
Title of host publication	2016 IEEE Photonics Conference, IPC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	540-541
Number of pages	2
ISBN (Electronic)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831220
Publication status	Published - 2017 Jan 23
Externally published	Yes
Event	29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: 2016 Oct 2 → 2016 Oct 6

Publication series

Name	2016 IEEE Photonics Conference, IPC 2016

Other

Other	29th IEEE Photonics Conference, IPC 2016
Country/Territory	United States
City	Waikoloa
Period	16/10/2 → 16/10/6

Keywords

direct bonding
epitaxial growth
membrane lasers
silicon photonics

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/IPCon.2016.7831220

Cite this

Fujii, T., Takeda, K., Kanno, E., Hasebe, K., Nishi, H., Yamamoto, T., Kakitsuka, T., & Matsuo, S. (2017). Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 540-541). [7831220] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831220

Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate. / Fujii, Takuro; Takeda, Koji; Kanno, Erina et al.

2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 540-541 7831220 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fujii, T, Takeda, K, Kanno, E, Hasebe, K, Nishi, H, Yamamoto, T, Kakitsuka, T & Matsuo, S 2017, Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate. in 2016 IEEE Photonics Conference, IPC 2016., 7831220, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 540-541, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 16/10/2. https://doi.org/10.1109/IPCon.2016.7831220

Fujii T, Takeda K, Kanno E, Hasebe K, Nishi H, Yamamoto T et al. Heterogeneously integrated lasers using epitaxially grown III-V active layer on directly bonded InP/SiO₂/Si substrate. In 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 540-541. 7831220. (2016 IEEE Photonics Conference, IPC 2016). doi: 10.1109/IPCon.2016.7831220

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abstract = "We have grown an active InGaAsP-6QW core layer on a thin-InP layer directly bonded to a SiO/Si substrate in order to fabricate a membrane laser. The device exhibits a 1.35-mA threshold current, a 340-wW fiber output power, and direct modulation up to 40 Gbit/s (NRZ).",

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