Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Koji Takeda, Tomonari Sato, Takuro Fujii, Eiichi Kuramochi, Masaya Notomi, Koichi Hasebe, Takaaki Kakitsuka, Shinji Matsuo

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We demonstrate the continuous-wave operation of lambda-scale embedded active-region photonic-crystal (LEAP) lasers at room temperature, which we fabricated on a Si wafer. The on-Si LEAP lasers exhibit a threshold current of 31 μA, which is the lowest reported value for any type of semiconductor laser on Si. This reveals the great potential of LEAP lasers as light sources for on- or off-chip optical interconnects with ultra-low power consumption in future information communication technology devices including CMOS processors.

Original languageEnglish
Pages (from-to)702-708
Number of pages7
JournalOptics Express
Volume23
Issue number2
DOIs
Publication statusPublished - 2015 Jan 26

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Takeda, K., Sato, T., Fujii, T., Kuramochi, E., Notomi, M., Hasebe, K., Kakitsuka, T., & Matsuo, S. (2015). Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects. Optics Express, 23(2), 702-708. https://doi.org/10.1364/OE.23.000702