Hexagonal boron nitride grown by MOVPE

Y. Kobayashi, T. Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and metalorganic vapor phase epitaxy. By introducing flow-rate modulation epitaxy (FME), which enables us to reduce parasitic reactions and lower the optimal growth temperature, we have succeeded in growing single-phase h-BN epitaxial films on nearly lattice-matched (1 1 1) Ni substrates. The h-BN epitaxial films exhibit near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence at room temperature. The combination of FME and the lattice-matched substrate paves the way for the epitaxial growth of high-quality h-BN.

Original languageEnglish
Pages (from-to)5048-5052
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Boron nitride
boron nitrides
Epitaxial growth
Epitaxial films
Crystal lattices
epitaxy
flow velocity
Flow rate
Modulation
modulation
Cathodoluminescence
Growth temperature
Substrates
Optical devices
cathodoluminescence
vapor phase epitaxy
Luminescence
Chemical vapor deposition
Energy gap

Keywords

  • A3. Low press. metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Hexagonal boron nitride grown by MOVPE. / Kobayashi, Y.; Akasaka, T.; Makimoto, Toshiki.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 5048-5052.

Research output: Contribution to journalArticle

Kobayashi, Y. ; Akasaka, T. ; Makimoto, Toshiki. / Hexagonal boron nitride grown by MOVPE. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 5048-5052.
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