Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy

Y. Kobayashi, T. Nakamura, T. Akasaka, Toshiki Makimoto, N. Matsumoto

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Single-phase (0 0 0 1) hexagonal boron nitride (h-BN) heteroepitaxial layers were successfully grown on lattice-matched Ni (1 1 1) substrate by flow-rate modulation epitaxy (FME) using triethylboron (TEB) and ammonia (NH3) at 1020 °C for the first time. The structural properties of the h-BN layers were investigated by high-resolution X-ray diffraction (XRD). The first-ever X-ray rocking curve (XRC) measurement of an h-BN layers was performed and the minimum full-width of half-maximum of 0.7° was obtained. For the h-BN FME growth, larger NH3 flow rates and longer NH3 exposure time are preferable for improving the crystal quality. Our approach enables us to drastically improve the crystal quality of h-BN at relatively low growth temperature.

Original languageEnglish
Pages (from-to)325-327
Number of pages3
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan
Externally publishedYes

Fingerprint

Boron nitride
boron nitrides
Epitaxial growth
epitaxy
flow velocity
Flow rate
Modulation
modulation
Substrates
Crystals
Growth temperature
Ammonia
crystals
Structural properties
ammonia
x rays
boron nitride
X ray diffraction
X rays
high resolution

Keywords

  • A3. Low press
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy. / Kobayashi, Y.; Nakamura, T.; Akasaka, T.; Makimoto, Toshiki; Matsumoto, N.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.2007, p. 325-327.

Research output: Contribution to journalArticle

Kobayashi, Y. ; Nakamura, T. ; Akasaka, T. ; Makimoto, Toshiki ; Matsumoto, N. / Hexagonal boron nitride on Ni (1 1 1) substrate grown by flow-rate modulation epitaxy. In: Journal of Crystal Growth. 2007 ; Vol. 298, No. SPEC. ISS. pp. 325-327.
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