High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Research output: Contribution to journalConference article

Abstract

Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalInstitute of Physics Conference Series
Volume174
Publication statusPublished - 2003 Dec 1
EventCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
Duration: 2002 Oct 72002 Oct 10

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors'. Together they form a unique fingerprint.

  • Cite this