High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
EditorsM. Ilegems, G. Weimann, J. Wagner
Pages231-235
Number of pages5
Volume174
Publication statusPublished - 2003
Externally publishedYes
EventCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors - Lausanne, Switzerland
Duration: 2002 Oct 72002 Oct 10

Other

OtherCompound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors
CountrySwitzerland
CityLausanne
Period02/10/702/10/10

Fingerprint

bipolar transistors
accumulators
heterojunctions
emitters
breakdown
electric fields
electrical faults
leakage
transmission electron microscopy
cross sections
defects
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Makimoto, T., Kumakura, K., & Kobayashi, N. (2003). High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors. In M. Ilegems, G. Weimann, & J. Wagner (Eds.), Institute of Physics Conference Series (Vol. 174, pp. 231-235)

High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Naoki.

Institute of Physics Conference Series. ed. / M. Ilegems; G. Weimann; J. Wagner. Vol. 174 2003. p. 231-235.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Makimoto, T, Kumakura, K & Kobayashi, N 2003, High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors. in M Ilegems, G Weimann & J Wagner (eds), Institute of Physics Conference Series. vol. 174, pp. 231-235, Compound Semiconductors 2002 - Proceedings of the Twenty-Ninth International Symposium on Compound Semiconductors, Lausanne, Switzerland, 02/10/7.
Makimoto T, Kumakura K, Kobayashi N. High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors. In Ilegems M, Weimann G, Wagner J, editors, Institute of Physics Conference Series. Vol. 174. 2003. p. 231-235
Makimoto, Toshiki ; Kumakura, Kazuhide ; Kobayashi, Naoki. / High breakdown electric field for Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors. Institute of Physics Conference Series. editor / M. Ilegems ; G. Weimann ; J. Wagner. Vol. 174 2003. pp. 231-235
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AB - Npn-type AlGaN/InGaN/GaN heterojunction bipolar transistors have been fabricated for high power application. Their common-emitter current-voltage characteristics showed a high breakdown voltage of 120 V, corresponding to the breakdown electric field of 2.3 MV/cm in the collector. The cross-section transmission electron microscopy image showed that the V-shape defects in InGaN were filled with wider bandgap AlGaN layers during the emitter growth. This is considered to prevent the leakage current from the base to the collector, resulting the high breakdown electric field.

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