High characteristic temperature of highly stacked quantum-dot laser for 1.55-μm band

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticle

53 Citations (Scopus)


We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 °C-80 °C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number2
Publication statusPublished - 2010 Jan 15
Externally publishedYes



  • Characteristic temperature
  • Quantum dot (qd)
  • Stacking strain compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

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