High characteristic temperature of highly stacked quantum-dot laser for 1.55-μm band

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We fabricated broad-area laser diodes comprising 30-layer stacks of InAs quantum dots (QDs) by using strain compensation. The devices exhibited ground-state lasing at 1529 nm in pulsed mode with a high characteristic temperature of 113 K around room temperature (20 °C-80 °C). Ground-state lasing was achieved because of the high QD density afforded by strain compensation.

Original languageEnglish
Pages (from-to)103-105
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number2
DOIs
Publication statusPublished - 2010 Jan 15
Externally publishedYes

Fingerprint

Quantum dot lasers
Ground state
Semiconductor quantum dots
lasing
quantum dots
ground state
lasers
Semiconductor lasers
semiconductor lasers
Temperature
temperature
room temperature
Compensation and Redress
indium arsenide

Keywords

  • Characteristic temperature
  • Quantum dot (qd)
  • Stacking strain compensation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

High characteristic temperature of highly stacked quantum-dot laser for 1.55-μm band. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

In: IEEE Photonics Technology Letters, Vol. 22, No. 2, 15.01.2010, p. 103-105.

Research output: Contribution to journalArticle

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