High common-emitter current gains obtained by pnp GaN bipolar junction transistors

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We fabricated pnp GaN bipolar junction transistors and investigated their common-emitter and common-base current-voltage characteristics. The device structures were grown by metalorganic vapor phase epitaxy on a sapphire substrate. The base thickness was 0.12 μm and its electron concentration was estimated to be 3 × 10 17 cm -3 from the common-emitter current-voltage characteristics and the base conductivity. The common-emitter current-voltage characteristics showed very low leak current. The maximum current gains at room temperature were 50 and 69 from the common-emitter and the common-base current-voltage characteristics, respectively.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.E. Northrup, J. Neugebauer, D.C. Look, S.F. Chichibu, H. Riechert
Pages793-798
Number of pages6
Volume693
Publication statusPublished - 2002
Externally publishedYes
EventGaN and Related Alloys-2001 - Boston, MA, United States
Duration: 2001 Nov 262001 Nov 30

Other

OtherGaN and Related Alloys-2001
CountryUnited States
CityBoston, MA
Period01/11/2601/11/30

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kumakura, K., Makimoto, T., & Kobayashi, N. (2002). High common-emitter current gains obtained by pnp GaN bipolar junction transistors. In J. E. Northrup, J. Neugebauer, D. C. Look, S. F. Chichibu, & H. Riechert (Eds.), Materials Research Society Symposium - Proceedings (Vol. 693, pp. 793-798)