High-concentration ozone generator for oxidation of silicon operating at atmospheric pressure

Kunihiko Koike, Tatsuo Fukuda, Shingo Ichimura, Akira Kurokawa

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

A high-concentration ozone generator operating at atmospheric pressure was developed to produce ozone for use in fabrication of ultrathin silicon oxide films. A technique for adsorption onto silica gel, in which ozone has adsorption priority over oxygen, was adopted to obtain concentrated ozone. An ozone-oxygen mixture gas generated by a commercial ozonizer is fed in turn to three parallel adsorption columns that are kept at -60°C. After the adsorption process, the ozone-enriched gas is desorbed by a slow warming of the columns from -60 to 0°C and is stored in a storage vessel. Finally, the condensed ozone, at concentrations up to 30 vol % can be supplied continuously to a silicon oxidation chamber at atmospheric pressure and a constant flow rate. Moreover, highly concentrated ozone above 70 vol % can be produced in a batch process by using an additional purification procedure prior to the desorption. We confirmed that even with 25 vol % ozone gas, SiO2 film as thick as 6.3 nm grew on a Si substrate at 600°C and 15 Torr in a 30 min exposure, while under the same experimental conditions only a 3.1 nm thick SiO2 film could be formed on the same substrate with pure oxygen.

Original languageEnglish
Pages (from-to)4182-4187
Number of pages6
JournalReview of Scientific Instruments
Volume71
Issue number11
DOIs
Publication statusPublished - 2000 Jan 1
Externally publishedYes

Fingerprint

Ozone
ozone
Atmospheric pressure
atmospheric pressure
generators
Silicon
Oxidation
oxidation
silicon
Adsorption
adsorption
Oxygen
oxygen
Silicon oxides
Silica gel
silica gel
Substrates
silicon oxides
Gases
gases

ASJC Scopus subject areas

  • Instrumentation

Cite this

High-concentration ozone generator for oxidation of silicon operating at atmospheric pressure. / Koike, Kunihiko; Fukuda, Tatsuo; Ichimura, Shingo; Kurokawa, Akira.

In: Review of Scientific Instruments, Vol. 71, No. 11, 01.01.2000, p. 4182-4187.

Research output: Contribution to journalArticle

Koike, Kunihiko ; Fukuda, Tatsuo ; Ichimura, Shingo ; Kurokawa, Akira. / High-concentration ozone generator for oxidation of silicon operating at atmospheric pressure. In: Review of Scientific Instruments. 2000 ; Vol. 71, No. 11. pp. 4182-4187.
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