High conversion gain, low power consumption W-band photoreceiver integrated with UTC-PD and InP-PHEMT amplifier

T. Umezawa, K. Akahane, A. Kanno, N. Yamamoto, K. Kashima, Tetsuya Kawanishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    5 Citations (Scopus)

    Abstract

    In this study, we successfully fabricated a W-band high-power photoreceiver with high output power and low power consumption. This W-band photoreceiver was integrated with a bias-free uni-travelling carrier photodetector (UTC-PD) and an InP high electron mobility transistor (PHEMT) amplifier for the first time. An ultrabroad 3 dB bandwidth beyond 110 GHz in an UTC-PD and maximum oscillation frequency of 320 GHz in a PHEMT low-noise amplifier were used for this hybrid integration. At 109 GHz, a high radio frequency output power of +10 dBm, high transimpedance gain of 828 □, and low power consumption of 67 mW was achieved in an optical-electrical converting process.

    Original languageEnglish
    Title of host publication2015 International Topical Meeting on Microwave Photonics, MWP 2015 - Conference Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    ISBN (Print)9781467393683
    DOIs
    Publication statusPublished - 2015 Dec 14
    EventInternational Topical Meeting on Microwave Photonics, MWP 2015 - Paphos, Cyprus
    Duration: 2015 Oct 262015 Oct 29

    Other

    OtherInternational Topical Meeting on Microwave Photonics, MWP 2015
    CountryCyprus
    CityPaphos
    Period15/10/2615/10/29

    Keywords

    • hybrid integration
    • InP-PHEMT Amplifier
    • UTC-PD

    ASJC Scopus subject areas

    • Signal Processing
    • Communication
    • Computer Networks and Communications

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