High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto

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19 Citations (Scopus)

Abstract

We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 10 17 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB 2/Ron has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

Original languageEnglish
Pages (from-to)2316-2319
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24
Externally publishedYes

Fingerprint

Diodes
diodes
Electric fields
conduction
electric fields
Substrates
Chemical analysis
Vapor phase epitaxy
tradeoffs
Current voltage characteristics
Electric breakdown
electrical faults
multiplication
vapor phase epitaxy
figure of merit
avalanches
Energy gap
low pressure
Doping (additives)
Semiconductor materials

Keywords

  • AIGaN
  • Breakdown voltage
  • Critical electric field
  • N-SiC
  • On-state resistance
  • Vertical conducting structure

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate",
abstract = "We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57{\%} is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 10 17 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB 2/Ron has its maximum when the Al composition is about 30{\%} and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.",
keywords = "AIGaN, Breakdown voltage, Critical electric field, N-SiC, On-state resistance, Vertical conducting structure",
author = "Atsushi Nishikawa and Kazuhide Kumakura and Toshiki Makimoto",
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T1 - High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Makimoto, Toshiki

PY - 2007/4/24

Y1 - 2007/4/24

N2 - We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 10 17 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB 2/Ron has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

AB - We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 10 17 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB 2/Ron has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

KW - AIGaN

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KW - Critical electric field

KW - N-SiC

KW - On-state resistance

KW - Vertical conducting structure

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