High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate

Atsushi Nishikawa, Kazuhide Kumakura, Toshiki Makimoto

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We have succeeded in obtaining the high critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate grown by low-pressure metal organic vapor phase epitaxy. The critical electric field of AlGaN with Al composition of 57% is as high as 8.1 MV/cm, the highest among semiconductors with a doping concentration of less than 10 17 cm-3, at which the avalanche multiplication process takes place. The critical electric field is proportional to the bandgap energy to a power of 2.7. In the forward current-voltage characteristics, the on-state resistance of the diode increases with increasing Al composition. Since there is a tradeoff between the breakdown voltage (VB) and the on-state resistance (Ron), the figure of merit VB 2/Ron has its maximum when the Al composition is about 30% and is twice as high as that for GaN-based diodes. This indicates that AlGaN-based electronic devices are more promising for high-power operation than GaN-based ones.

Original languageEnglish
Pages (from-to)2316-2319
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24
Externally publishedYes

Keywords

  • AIGaN
  • Breakdown voltage
  • Critical electric field
  • N-SiC
  • On-state resistance
  • Vertical conducting structure

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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