High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

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18 Citations (Scopus)

Abstract

We report the current-voltage characteristics of AlxGa 1-xN (x=0-0.22) p-i-n vertical conducting diodes grown on n-SiC substrates by low-pressure metal organic vapor phase epitaxy. An increase in the breakdown voltage was experimentally demonstrated with increasing Al composition. The corresponding critical electric fields were calculated to be 2.4 MVcm for GaN and 3.5 MVcm for Al0.22 Ga0.78 N. The critical electric field is proportional to the band gap energy to a power of 2.5. The forward voltage drop also increases with increasing Al composition but it is still as low as 5.2 V even in the case of the Al0.22 Ga0.78 N p-i-n diode.

Original languageEnglish
Article number173508
JournalApplied Physics Letters
Volume88
Issue number17
DOIs
Publication statusPublished - 2006
Externally publishedYes

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diodes
conduction
p-i-n diodes
electric fields
electric potential
electrical faults
vapor phase epitaxy
low pressure
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates. / Nishikawa, Atsushi; Kumakura, Kazuhide; Akasaka, Tetsuya; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 88, No. 17, 173508, 2006.

Research output: Contribution to journalArticle

Nishikawa, Atsushi ; Kumakura, Kazuhide ; Akasaka, Tetsuya ; Makimoto, Toshiki. / High critical electric field of AlxGa1-xN p-i-n vertical conducting diodes on n-SiC substrates. In: Applied Physics Letters. 2006 ; Vol. 88, No. 17.
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