TY - JOUR
T1 - High current densities in a highly photoluminescent organic single-crystal light-emitting transistor
AU - Sawabe, Kosuke
AU - Takenobu, Taishi
AU - Bisri, Satria Zulkarnaen
AU - Yamao, Takeshi
AU - Hotta, Shu
AU - Iwasa, Yoshihiro
PY - 2010/7/26
Y1 - 2010/7/26
N2 - We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.
AB - We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.
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U2 - 10.1063/1.3466915
DO - 10.1063/1.3466915
M3 - Article
AN - SCOPUS:77955735725
SN - 0003-6951
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 4
M1 - 043307
ER -