High current densities in a highly photoluminescent organic single-crystal light-emitting transistor

Kosuke Sawabe, Taishi Takenobu, Satria Zulkarnaen Bisri, Takeshi Yamao, Shu Hotta, Yoshihiro Iwasa

    Research output: Contribution to journalArticle

    38 Citations (Scopus)

    Abstract

    We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.

    Original languageEnglish
    Article number043307
    JournalApplied Physics Letters
    Volume97
    Issue number4
    DOIs
    Publication statusPublished - 2010 Jul 26

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    high current
    transistors
    current density
    single crystals
    electrons
    field effect transistors
    traps
    nitrogen
    fabrication
    configurations

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    High current densities in a highly photoluminescent organic single-crystal light-emitting transistor. / Sawabe, Kosuke; Takenobu, Taishi; Bisri, Satria Zulkarnaen; Yamao, Takeshi; Hotta, Shu; Iwasa, Yoshihiro.

    In: Applied Physics Letters, Vol. 97, No. 4, 043307, 26.07.2010.

    Research output: Contribution to journalArticle

    Sawabe, Kosuke ; Takenobu, Taishi ; Bisri, Satria Zulkarnaen ; Yamao, Takeshi ; Hotta, Shu ; Iwasa, Yoshihiro. / High current densities in a highly photoluminescent organic single-crystal light-emitting transistor. In: Applied Physics Letters. 2010 ; Vol. 97, No. 4.
    @article{d22b7588b3a744efb9c1a5749f2829a2,
    title = "High current densities in a highly photoluminescent organic single-crystal light-emitting transistor",
    abstract = "We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.",
    author = "Kosuke Sawabe and Taishi Takenobu and Bisri, {Satria Zulkarnaen} and Takeshi Yamao and Shu Hotta and Yoshihiro Iwasa",
    year = "2010",
    month = "7",
    day = "26",
    doi = "10.1063/1.3466915",
    language = "English",
    volume = "97",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "4",

    }

    TY - JOUR

    T1 - High current densities in a highly photoluminescent organic single-crystal light-emitting transistor

    AU - Sawabe, Kosuke

    AU - Takenobu, Taishi

    AU - Bisri, Satria Zulkarnaen

    AU - Yamao, Takeshi

    AU - Hotta, Shu

    AU - Iwasa, Yoshihiro

    PY - 2010/7/26

    Y1 - 2010/7/26

    N2 - We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.

    AB - We report the improvement of electron transport in 5, 5″ -bis(biphenylyl)- 2, 2′: 5′, 2″ -terthiophene (BP3T) single crystals on a field-effect transistor configuration by systematically investigating the effects of device aging under pure nitrogen and optimizing the organic dielectric layer-fabrication process. We reduced the effect of electron traps and achieved extremely high current densities up to 10 kA/ cm 2, which is one or two orders of magnitude greater than the current densities achieved in previous devices.

    UR - http://www.scopus.com/inward/record.url?scp=77955735725&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77955735725&partnerID=8YFLogxK

    U2 - 10.1063/1.3466915

    DO - 10.1063/1.3466915

    M3 - Article

    VL - 97

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 4

    M1 - 043307

    ER -