High current density in light-emitting transistors of organic single crystals

Taishi Takenobu, Satria Zulkarnaen Bisri, Tetsuo Takahashi, Masayuki Yahiro, Chihaya Adachi, Yoshihiro Iwasa

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185 Citations (Scopus)

Abstract

We measured the external electroluminescence quantum efficiency (ηext) in light-emitting field-effect transistors (LETs) made of organic single crystals and found that, in the ambipolar transport region, ηext is not degraded up to several hundreds A/cm2 current-density range, which is 2 orders of magnitude larger than that achieved in conventional organic light-emitting diodes. The present result indicates the single-crystal organic LET is a promising device structure that is free from various kinds of nonradiative losses such as exciton dissociation near electrodes and exciton annihilations.

Original languageEnglish
Article number066601
JournalPhysical Review Letters
Volume100
Issue number6
DOIs
Publication statusPublished - 2008 Feb 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Takenobu, T., Bisri, S. Z., Takahashi, T., Yahiro, M., Adachi, C., & Iwasa, Y. (2008). High current density in light-emitting transistors of organic single crystals. Physical Review Letters, 100(6), [066601]. https://doi.org/10.1103/PhysRevLett.100.066601