High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto; K. Kumakura; N. Kobayashi

doi:10.1109/DRC.2003.1226854

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, K. Kumakura, N. Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.

Original language	English
Title of host publication	Device Research Conference - Conference Digest, DRC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	23-24
Number of pages	2
Volume	2003-January
ISBN (Print)	0780377273
DOIs	https://doi.org/10.1109/DRC.2003.1226854
Publication status	Published - 2003
Externally published	Yes
Event	61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 2003 Jun 23 → 2003 Jun 25

Other

Other	61st Device Research Conference, DRC 2003
Country/Territory	United States
City	Salt Lake City
Period	03/6/23 → 03/6/25

Keywords

Aluminum gallium nitride
Diodes
Double heterojunction bipolar transistors
Epitaxial growth
Epitaxial layers
Gallium nitride
Heterojunction bipolar transistors
Laboratories
Low voltage
Temperature

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2003.1226854

Cite this

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors. / Makimoto, Toshiki; Kumakura, K.; Kobayashi, N.

Device Research Conference - Conference Digest, DRC. Vol. 2003-January Institute of Electrical and Electronics Engineers Inc., 2003. p. 23-24 1226854.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Makimoto, T, Kumakura, K & Kobayashi, N 2003, High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors. in Device Research Conference - Conference Digest, DRC. vol. 2003-January, 1226854, Institute of Electrical and Electronics Engineers Inc., pp. 23-24, 61st Device Research Conference, DRC 2003, Salt Lake City, United States, 03/6/23. https://doi.org/10.1109/DRC.2003.1226854

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abstract = "In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.",

keywords = "Aluminum gallium nitride, Diodes, Double heterojunction bipolar transistors, Epitaxial growth, Epitaxial layers, Gallium nitride, Heterojunction bipolar transistors, Laboratories, Low voltage, Temperature",

author = "Toshiki Makimoto and K. Kumakura and N. Kobayashi",

year = "2003",

doi = "10.1109/DRC.2003.1226854",

language = "English",

isbn = "0780377273",

volume = "2003-January",

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KW - Aluminum gallium nitride

KW - Diodes

KW - Double heterojunction bipolar transistors

KW - Epitaxial growth

KW - Epitaxial layers

KW - Gallium nitride

KW - Heterojunction bipolar transistors

KW - Laboratories

KW - Low voltage

KW - Temperature

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BT - Device Research Conference - Conference Digest, DRC

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 61st Device Research Conference, DRC 2003

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ER -

High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Abstract

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Keywords

ASJC Scopus subject areas

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