High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimoto, K. Kumakura, N. Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.

Original languageEnglish
Title of host publicationDevice Research Conference - Conference Digest, DRC
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-24
Number of pages2
Volume2003-January
ISBN (Print)0780377273
DOIs
Publication statusPublished - 2003
Externally publishedYes
Event61st Device Research Conference, DRC 2003 - Salt Lake City, United States
Duration: 2003 Jun 232003 Jun 25

Other

Other61st Device Research Conference, DRC 2003
CountryUnited States
CitySalt Lake City
Period03/6/2303/6/25

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Keywords

  • Aluminum gallium nitride
  • Diodes
  • Double heterojunction bipolar transistors
  • Epitaxial growth
  • Epitaxial layers
  • Gallium nitride
  • Heterojunction bipolar transistors
  • Laboratories
  • Low voltage
  • Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Makimoto, T., Kumakura, K., & Kobayashi, N. (2003). High current gain (>2000) and reduced common-emitter offset voltage of GaN/InGaN double heterojunction bipolar transistors. In Device Research Conference - Conference Digest, DRC (Vol. 2003-January, pp. 23-24). [1226854] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2003.1226854