Abstract
In this paper, we report on the significantly improved common-emitter I-V characteristics of GaN/InGaN DHBT with this regrown p-InGaN base layer.
Original language | English |
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Title of host publication | Device Research Conference - Conference Digest, DRC |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 23-24 |
Number of pages | 2 |
Volume | 2003-January |
ISBN (Print) | 0780377273 |
DOIs | |
Publication status | Published - 2003 |
Externally published | Yes |
Event | 61st Device Research Conference, DRC 2003 - Salt Lake City, United States Duration: 2003 Jun 23 → 2003 Jun 25 |
Other
Other | 61st Device Research Conference, DRC 2003 |
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Country/Territory | United States |
City | Salt Lake City |
Period | 03/6/23 → 03/6/25 |
Keywords
- Aluminum gallium nitride
- Diodes
- Double heterojunction bipolar transistors
- Epitaxial growth
- Epitaxial layers
- Gallium nitride
- Heterojunction bipolar transistors
- Laboratories
- Low voltage
- Temperature
ASJC Scopus subject areas
- Electrical and Electronic Engineering