High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Toshiki Makimoto, Kazuhide Kumakura, Naoki Kobayashi

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.

Original languageEnglish
Pages (from-to)1035-1037
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
Publication statusPublished - 2003 Aug 4
Externally publishedYes

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bipolar transistors
high current
heterojunctions
nitrides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN. / Makimoto, Toshiki; Kumakura, Kazuhide; Kobayashi, Naoki.

In: Applied Physics Letters, Vol. 83, No. 5, 04.08.2003, p. 1035-1037.

Research output: Contribution to journalArticle

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