GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 2003 Aug 4|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)