High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Toshiki Makimoto; Kazuhide Kumakura; Naoki Kobayashi

doi:10.1063/1.1597989

High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Toshiki Makimoto^*, Kazuhide Kumakura, Naoki Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.

Original language	English
Pages (from-to)	1035-1037
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	5
DOIs	https://doi.org/10.1063/1.1597989
Publication status	Published - 2003 Aug 4
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1597989

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title = "High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN",

abstract = "GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.",

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AU - Makimoto, Toshiki

AU - Kumakura, Kazuhide

AU - Kobayashi, Naoki

PY - 2003/8/4

Y1 - 2003/8/4

N2 - GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.

AB - GaN/InGaN double heterojunction bipolar transistors (DHBT) with a regrown p-InGaN base layer were fabricated on SiC substrates. The base ohmic characteristics were much improved by the extrinsic base regrowth. It was found that regrowth of p-InGaN is effective for improving the characteristics of nitride HBTs.

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JF - Applied Physics Letters

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High current gain (>2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN

Abstract

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