TY - JOUR
T1 - High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors
AU - Makimoto, T.
AU - Kumakura, K.
AU - Kobayashi, N.
PY - 2001/11/1
Y1 - 2001/11/1
N2 - InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1 × 1019 cm-3 corresponding to a hole concentration of 5 × 1018 cm-3 at room temperature. The common-emitter I-V characteristics showed good saturation characteristics and a maximum current gain of 20 was obtained at room temperature.
AB - InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1 × 1019 cm-3 corresponding to a hole concentration of 5 × 1018 cm-3 at room temperature. The common-emitter I-V characteristics showed good saturation characteristics and a maximum current gain of 20 was obtained at room temperature.
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U2 - 10.1002/1521-396X(200111)188:1<183::AID-PSSA183>3.0.CO;2-L
DO - 10.1002/1521-396X(200111)188:1<183::AID-PSSA183>3.0.CO;2-L
M3 - Article
AN - SCOPUS:0000247655
SN - 0031-8965
VL - 188
SP - 183
EP - 186
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -