High Current Gains Obtained by InGaN/GaN Double Heterojunction Bipolar Transistors

Toshiki Makimoto, K. Kumakura, N. Kobayashi

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14 Citations (Scopus)

Abstract

InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thickness were 0.06 and 100 nm, respectively. The Mg doping concentration in the base layer was 1 × 1019 cm-3 corresponding to a hole concentration of 5 × 1018 cm-3 at room temperature. The common-emitter I-V characteristics showed good saturation characteristics and a maximum current gain of 20 was obtained at room temperature.

Original languageEnglish
Pages (from-to)183-186
Number of pages4
JournalPhysica Status Solidi (A) Applied Research
Volume188
Issue number1
DOIs
Publication statusPublished - 2001 Nov
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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