Description of the fabrication of InGaN/GaN double heterojunction bipolar transistors using p-type InGaN as a base layer was presented. Metalorganic vapor phase expitaxy was used to grow structures on SiC substrates. The structures were defined by electron cyclotron resonance plasma etching. The common-emitter current voltage characteristics were also analyzed. A maximum current gain of 20 was reported.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)