High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

Toshiki Makimoto, K. Kumakura, N. Kobayashi

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Description of the fabrication of InGaN/GaN double heterojunction bipolar transistors using p-type InGaN as a base layer was presented. Metalorganic vapor phase expitaxy was used to grow structures on SiC substrates. The structures were defined by electron cyclotron resonance plasma etching. The common-emitter current voltage characteristics were also analyzed. A maximum current gain of 20 was reported.

Original languageEnglish
Pages (from-to)380-381
Number of pages2
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - 2001 Jul 16
Externally publishedYes

Fingerprint

bipolar transistors
high current
heterojunctions
plasma etching
electron cyclotron resonance
emitters
vapor phases
fabrication
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base. / Makimoto, Toshiki; Kumakura, K.; Kobayashi, N.

In: Applied Physics Letters, Vol. 79, No. 3, 16.07.2001, p. 380-381.

Research output: Contribution to journalArticle

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