High current gains obtained by InGaN/GaN double heterojunction bipolar transistors with p-InGaN base

T. Makimoto, K. Kumakura, N. Kobayashi

Research output: Contribution to journalArticle

69 Citations (Scopus)

Abstract

Description of the fabrication of InGaN/GaN double heterojunction bipolar transistors using p-type InGaN as a base layer was presented. Metalorganic vapor phase expitaxy was used to grow structures on SiC substrates. The structures were defined by electron cyclotron resonance plasma etching. The common-emitter current voltage characteristics were also analyzed. A maximum current gain of 20 was reported.

Original languageEnglish
Pages (from-to)380-381
Number of pages2
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - 2001 Jul 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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