High current injection to a UV-LED grown on a bulk AlN substrate

Toshio Nishida, Tomoyuki Ban, Hisao Saito, Toshiki Makimoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We applied a bulk AlN substrate to an AlGaN-based ultraviolet light emitting diode (UV-LED) and found that this combination enables high injection current, which shows the LED's potential for large ultraviolet flux extraction. Heat dissipation is an important issue for LEDs. Bulk AlN substrate has high thermal conductivity, a wurtzite crystal symmetry the same as that of nitride emitters, and transparency in the ultraviolet wavelength range. An UV-LED grown on a bulk AlN substrate shows output power linearity up to high injection current up to 300 mA, whereas a similar device grown on an AlN-template formed on a sapphire substrate only shows linearity up to an injection current of about 150 mA. It also showed very stable emission peak wavelength. For example, the emission peak shift is less than 2 nm in spite of the large injection current of 200 mA. Both findings are attributed to the heat dissipation afforded by the high thermal conductivity of the bulk AlN. This LED still suffers from internal absorption loss caused by the residual color centers in the AlN at present. However, further improvement of bulk AlN substrates will lead to high flux and highly efficient ultraviolet sources.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Pages3-9
Number of pages7
Volume798
Publication statusPublished - 2003
Externally publishedYes
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 2003 Dec 12003 Dec 5

Other

OtherGaN and Related Alloys - 2003
CountryUnited States
CityBoston, MA
Period03/12/103/12/5

Fingerprint

Light emitting diodes
Substrates
Heat losses
Thermal conductivity
Fluxes
Color centers
Wavelength
Aluminum Oxide
Crystal symmetry
Sapphire
Nitrides
Transparency
Ultraviolet Rays

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Nishida, T., Ban, T., Saito, H., & Makimoto, T. (2003). High current injection to a UV-LED grown on a bulk AlN substrate. In H. M. Ng, M. Wraback, K. Hiramatsu, & N. Grandjean (Eds.), Materials Research Society Symposium - Proceedings (Vol. 798, pp. 3-9)

High current injection to a UV-LED grown on a bulk AlN substrate. / Nishida, Toshio; Ban, Tomoyuki; Saito, Hisao; Makimoto, Toshiki.

Materials Research Society Symposium - Proceedings. ed. / H.M. Ng; M. Wraback; K. Hiramatsu; N. Grandjean. Vol. 798 2003. p. 3-9.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nishida, T, Ban, T, Saito, H & Makimoto, T 2003, High current injection to a UV-LED grown on a bulk AlN substrate. in HM Ng, M Wraback, K Hiramatsu & N Grandjean (eds), Materials Research Society Symposium - Proceedings. vol. 798, pp. 3-9, GaN and Related Alloys - 2003, Boston, MA, United States, 03/12/1.
Nishida T, Ban T, Saito H, Makimoto T. High current injection to a UV-LED grown on a bulk AlN substrate. In Ng HM, Wraback M, Hiramatsu K, Grandjean N, editors, Materials Research Society Symposium - Proceedings. Vol. 798. 2003. p. 3-9
Nishida, Toshio ; Ban, Tomoyuki ; Saito, Hisao ; Makimoto, Toshiki. / High current injection to a UV-LED grown on a bulk AlN substrate. Materials Research Society Symposium - Proceedings. editor / H.M. Ng ; M. Wraback ; K. Hiramatsu ; N. Grandjean. Vol. 798 2003. pp. 3-9
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