High-current metal oxide semiconductor field-effect transistors on h-terminated diamond surfaces and their high-frequency operation

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    33 Citations (Scopus)

    Abstract

    Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen-carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1A/mm and the highest transconductance is 400mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.

    Original languageEnglish
    Article number090111
    JournalJapanese Journal of Applied Physics
    Volume51
    Issue number9
    DOIs
    Publication statusPublished - 2012 Sep

    Fingerprint

    MOSFET devices
    Field effect transistors
    metal oxide semiconductors
    high current
    Diamonds
    field effect transistors
    diamonds
    Adsorbates
    MESFET devices
    Hydrogen
    Drain current
    Cutoff frequency
    Transconductance
    transconductance
    hydrogen
    Transistors
    Current density
    Stabilization
    transistors
    cut-off

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

    Cite this

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    abstract = "Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen-carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1A/mm and the highest transconductance is 400mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.",
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    AB - Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen-carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1A/mm and the highest transconductance is 400mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.

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