High-current metal oxide semiconductor field-effect transistors on h-terminated diamond surfaces and their high-frequency operation

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Abstract

Metal semiconductor field-effect transistors (MESFETs) or metal oxide semiconductor FETs (MOSFETs) can be fabricated on hydrogen-terminated diamond without losing the surface hydrogen-carbon bonds and the surface adsorbates responsible for the surface carrier generation. Those FETs show their best performance in diamond transistors. The maximum drain current density is above 1A/mm and the highest transconductance is 400mS/mm. These values are comparable to those of modern FETs made of Si or III-V semiconductors. Regarding RF performance, the highest cutoff frequency reaches nearly 50 GHz. The power handling capability exceeds those of Si and GaAs at 1 GHz. The function of surface adsorbates and their stabilization are crucial for the application of diamond FETs.

Original languageEnglish
Article number090111
JournalJapanese journal of applied physics
Volume51
Issue number9
DOIs
Publication statusPublished - 2012 Sep 1

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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