High-density and low-power nonvolatile static random access memory using spin-transfer-torque magnetic tunnel junction

Takashi Ohsawa, Fumitaka Iga, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

A novel nonvolatile static random access memory cell is proposed that consists of four transistors and two spin-transfer-torque magnetic tunnel junctions (STT-MTJs). In the case of the NFET driver cell, the free layers of the magnetic tunnel junctions are connected to the transistors' sources and drains to make the cell read-disturb free. The static power is totally eliminated as the power line is shut down during data hold. The static noise margin of the cell is calculated based on the experimental data on MTJ switching that is enhanced from the resistive load SRAM cell due to the MTJ's switching operation. The cell size is estimated to become smaller than the 6-transistor SRAM cell when it is designed at 45nm node and beyond owing to the MTJ's area shrink as well as the thinning of its tunnel dielectrics (MgO).

Original languageEnglish
Article number02BD01
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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