High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

G. Kudlek, N. Presser, J. Gutowski, S. Durbin, D. Menke, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

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Abstract

MBE-grown ZnSe epilayers on (100) GaAs substrates are optically investigated under moderate to high excitation densities. Below the light-hole and heavy-hole exciton lines Xlh and Xhh, two lines I2 and I'2 are dominant in the luminescence spectra which are related to transitions from a neutral-donor-exciton complex (D0, X). For the first time, comparative excitation spectroscopy and magnetooptics of bound excitons in ZnSe epilayers allowed to determine their term structure, g-values and diamagnetic shifts. In the excitation spectra of the I2 line, a set of resonances located 1.2 meV to 2.9 meV on its high-energy side can be interpreted as specific transitions into excited states of the neutral-donor-exciton complex. For excitation densities until 50 kW/cm2, high-excitation bands appear, superimposing the exciton luminescence. They are discussed to be due to exciton-exciton collision processes and can be compared with high-density transitions known from bulk ZnSe crystals.

Original languageEnglish
Pages (from-to)667-672
Number of pages6
JournalJournal of Crystal Growth
Volume101
Issue number1-4
DOIs
Publication statusPublished - 1990 Apr 1
Externally publishedYes

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Epilayers
Molecular beam epitaxy
Excitons
Luminescence
excitons
Spectroscopy
luminescence
spectroscopy
excitation
Electron transitions
Magnetooptical effects
LDS 751
gallium arsenide
Excited states
Crystals
collisions
shift
Substrates
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers. / Kudlek, G.; Presser, N.; Gutowski, J.; Durbin, S.; Menke, D.; Kobayashi, Masakazu; Gunshor, R. L.

In: Journal of Crystal Growth, Vol. 101, No. 1-4, 01.04.1990, p. 667-672.

Research output: Contribution to journalArticle

Kudlek, G, Presser, N, Gutowski, J, Durbin, S, Menke, D, Kobayashi, M & Gunshor, RL 1990, 'High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers', Journal of Crystal Growth, vol. 101, no. 1-4, pp. 667-672. https://doi.org/10.1016/0022-0248(90)91055-U
Kudlek, G. ; Presser, N. ; Gutowski, J. ; Durbin, S. ; Menke, D. ; Kobayashi, Masakazu ; Gunshor, R. L. / High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers. In: Journal of Crystal Growth. 1990 ; Vol. 101, No. 1-4. pp. 667-672.
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AU - Presser, N.

AU - Gutowski, J.

AU - Durbin, S.

AU - Menke, D.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

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N2 - MBE-grown ZnSe epilayers on (100) GaAs substrates are optically investigated under moderate to high excitation densities. Below the light-hole and heavy-hole exciton lines Xlh and Xhh, two lines I2 and I'2 are dominant in the luminescence spectra which are related to transitions from a neutral-donor-exciton complex (D0, X). For the first time, comparative excitation spectroscopy and magnetooptics of bound excitons in ZnSe epilayers allowed to determine their term structure, g-values and diamagnetic shifts. In the excitation spectra of the I2 line, a set of resonances located 1.2 meV to 2.9 meV on its high-energy side can be interpreted as specific transitions into excited states of the neutral-donor-exciton complex. For excitation densities until 50 kW/cm2, high-excitation bands appear, superimposing the exciton luminescence. They are discussed to be due to exciton-exciton collision processes and can be compared with high-density transitions known from bulk ZnSe crystals.

AB - MBE-grown ZnSe epilayers on (100) GaAs substrates are optically investigated under moderate to high excitation densities. Below the light-hole and heavy-hole exciton lines Xlh and Xhh, two lines I2 and I'2 are dominant in the luminescence spectra which are related to transitions from a neutral-donor-exciton complex (D0, X). For the first time, comparative excitation spectroscopy and magnetooptics of bound excitons in ZnSe epilayers allowed to determine their term structure, g-values and diamagnetic shifts. In the excitation spectra of the I2 line, a set of resonances located 1.2 meV to 2.9 meV on its high-energy side can be interpreted as specific transitions into excited states of the neutral-donor-exciton complex. For excitation densities until 50 kW/cm2, high-excitation bands appear, superimposing the exciton luminescence. They are discussed to be due to exciton-exciton collision processes and can be compared with high-density transitions known from bulk ZnSe crystals.

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