High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications

Yong Ju Suh, Shohei Ishikawa, Hiroshi Ohta, Ryuichi Fujimoto, Nobuyuki Itoh, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a high dynamic range variable gain amplifier (VGA) using 130 nm CMOS technology for the triple-band W-CDMA applications. The VGA includes an active balun, a two-stage amplifier, two SPDT switches, and a V-I converter which converts a dc control voltage to the dc current for controlling the gain of the each amplifier. The operation voltage is 2.5 V. The dynamic range is over 100 dB at 800 MHz-band and 84 dB at 2 GHz-band. To realize high dynamic range with the two-stage amplifier, a novel exponential approximation function for V-I converter is proposed. The maximum output power at 800 MHz is 7 dBm with a gain of 27 dB. At this rated output power, the adjacent channel power rejection (ACPR) in +/-5 MHz offset frequency bands are -43 dBc which is highly linear performance.

Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Pages139-142
Number of pages4
Volume1
DOIs
Publication statusPublished - 2008
Event2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing
Duration: 2008 Apr 212008 Apr 24

Other

Other2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
CityNanjing
Period08/4/2108/4/24

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Cite this

Suh, Y. J., Ishikawa, S., Ohta, H., Fujimoto, R., Itoh, N., & Yoshimasu, T. (2008). High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. In 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT (Vol. 1, pp. 139-142). [4540323] https://doi.org/10.1109/ICMMT.2008.4540323