High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications

Yong Ju Suh, Shohei Ishikawa, Hiroshi Ohta, Ryuichi Fujimoto, Nobuyuki Itoh, Toshihiko Yoshimasu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a high dynamic range variable gain amplifier (VGA) using 130 nm CMOS technology for the triple-band W-CDMA applications. The VGA includes an active balun, a two-stage amplifier, two SPDT switches, and a V-I converter which converts a dc control voltage to the dc current for controlling the gain of the each amplifier. The operation voltage is 2.5 V. The dynamic range is over 100 dB at 800 MHz-band and 84 dB at 2 GHz-band. To realize high dynamic range with the two-stage amplifier, a novel exponential approximation function for V-I converter is proposed. The maximum output power at 800 MHz is 7 dBm with a gain of 27 dB. At this rated output power, the adjacent channel power rejection (ACPR) in +/-5 MHz offset frequency bands are -43 dBc which is highly linear performance.

Original languageEnglish
Title of host publication2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT
Pages139-142
Number of pages4
Volume1
DOIs
Publication statusPublished - 2008
Event2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT - Nanjing
Duration: 2008 Apr 212008 Apr 24

Other

Other2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT
CityNanjing
Period08/4/2108/4/24

Fingerprint

Code division multiple access
Voltage control
Frequency bands
Switches
Electric potential
performance
Variable gain amplifiers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

Cite this

Suh, Y. J., Ishikawa, S., Ohta, H., Fujimoto, R., Itoh, N., & Yoshimasu, T. (2008). High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. In 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT (Vol. 1, pp. 139-142). [4540323] https://doi.org/10.1109/ICMMT.2008.4540323

High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. / Suh, Yong Ju; Ishikawa, Shohei; Ohta, Hiroshi; Fujimoto, Ryuichi; Itoh, Nobuyuki; Yoshimasu, Toshihiko.

2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT. Vol. 1 2008. p. 139-142 4540323.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suh, YJ, Ishikawa, S, Ohta, H, Fujimoto, R, Itoh, N & Yoshimasu, T 2008, High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. in 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT. vol. 1, 4540323, pp. 139-142, 2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT, Nanjing, 08/4/21. https://doi.org/10.1109/ICMMT.2008.4540323
Suh YJ, Ishikawa S, Ohta H, Fujimoto R, Itoh N, Yoshimasu T. High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. In 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT. Vol. 1. 2008. p. 139-142. 4540323 https://doi.org/10.1109/ICMMT.2008.4540323
Suh, Yong Ju ; Ishikawa, Shohei ; Ohta, Hiroshi ; Fujimoto, Ryuichi ; Itoh, Nobuyuki ; Yoshimasu, Toshihiko. / High dynamic range variable gain amplifier using 130 nm CMOS technology for triple-band W-CDMA applications. 2008 International Conference on Microwave and Millimeter Wave Technology Proceedings, ICMMT. Vol. 1 2008. pp. 139-142
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