High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone

S. Hara, H. Sato, J. K. Twynam, M. Akagi, N. Nambu, N. Tanba, K. Yokshikawa, T. Kinosada, M. Yagura, H. Tsuji, T. Shinozaki, Toshihiko Yoshimasu, T. Miyajima, T. Tomita

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P1dB of 24 dBm and P1dB power added efficiency as high as 40 % are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.

Original languageEnglish
Title of host publicationProc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp
EditorsMahesh Kumar
Place of PublicationPiscataway, NJ, United States
PublisherPubl by IEEE
Pages19-22
Number of pages4
ISBN (Print)0780313232
Publication statusPublished - 1993
Externally publishedYes
EventProceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium - Atlanta, GA, USA
Duration: 1993 Jun 141993 Jun 15

Other

OtherProceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium
CityAtlanta, GA, USA
Period93/6/1493/6/15

Fingerprint

Monolithic microwave integrated circuits
Heterojunction bipolar transistors
Power amplifiers
Electric potential

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hara, S., Sato, H., Twynam, J. K., Akagi, M., Nambu, N., Tanba, N., ... Tomita, T. (1993). High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. In M. Kumar (Ed.), Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp (pp. 19-22). Piscataway, NJ, United States: Publ by IEEE.

High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. / Hara, S.; Sato, H.; Twynam, J. K.; Akagi, M.; Nambu, N.; Tanba, N.; Yokshikawa, K.; Kinosada, T.; Yagura, M.; Tsuji, H.; Shinozaki, T.; Yoshimasu, Toshihiko; Miyajima, T.; Tomita, T.

Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. ed. / Mahesh Kumar. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 19-22.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hara, S, Sato, H, Twynam, JK, Akagi, M, Nambu, N, Tanba, N, Yokshikawa, K, Kinosada, T, Yagura, M, Tsuji, H, Shinozaki, T, Yoshimasu, T, Miyajima, T & Tomita, T 1993, High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. in M Kumar (ed.), Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. Publ by IEEE, Piscataway, NJ, United States, pp. 19-22, Proceedings of the 1993 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium, Atlanta, GA, USA, 93/6/14.
Hara S, Sato H, Twynam JK, Akagi M, Nambu N, Tanba N et al. High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. In Kumar M, editor, Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. Piscataway, NJ, United States: Publ by IEEE. 1993. p. 19-22
Hara, S. ; Sato, H. ; Twynam, J. K. ; Akagi, M. ; Nambu, N. ; Tanba, N. ; Yokshikawa, K. ; Kinosada, T. ; Yagura, M. ; Tsuji, H. ; Shinozaki, T. ; Yoshimasu, Toshihiko ; Miyajima, T. ; Tomita, T. / High-Efficiency AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHZ Japanese digital cordless phone. Proc 1993 IEEE Microwave Millimeter Wave Monolithic Circ Symp. editor / Mahesh Kumar. Piscataway, NJ, United States : Publ by IEEE, 1993. pp. 19-22
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abstract = "An AlGaAs/GaAs HBT power amplifier MMIC for 1.9 GHz Japanese digital cordless phone applications is demonstrated. A P1dB of 24 dBm and P1dB power added efficiency as high as 40 {\%} are achieved at an operating voltage of only 3 v. This is the highest power added efficiency ever reported for such an amplifier operating at any voltage.",
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