Abstract
This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95 GHz and as high as 67.6% at 2.535 GHz. The fabricated Doherty PA exhibits an average output power of 25.5 dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95 GHz. The fabricated chip size is smaller than 1 mm2. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 699-706 |
| Number of pages | 8 |
| Journal | IEICE Transactions on Electronics |
| Volume | E102C |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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Keywords
- Heterojunction bipolar transistor
- Mobile communication
- Power amplifier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
High efficiency class-E and compact Doherty power amplifiers with novel harmonics termination for handset applications. / Sugiura, Tsuyoshi; Furuta, Satoshi; Murakami, Tadamasa; Tanji, Koki; Otani, Norihisa; Yoshimasu, Toshihiko.
In: IEICE Transactions on Electronics, Vol. E102C, No. 10, 01.01.2019, p. 699-706.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High efficiency class-E and compact Doherty power amplifiers with novel harmonics termination for handset applications
AU - Sugiura, Tsuyoshi
AU - Furuta, Satoshi
AU - Murakami, Tadamasa
AU - Tanji, Koki
AU - Otani, Norihisa
AU - Yoshimasu, Toshihiko
PY - 2019/1/1
Y1 - 2019/1/1
N2 - This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95 GHz and as high as 67.6% at 2.535 GHz. The fabricated Doherty PA exhibits an average output power of 25.5 dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95 GHz. The fabricated chip size is smaller than 1 mm2. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
AB - This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95 GHz and as high as 67.6% at 2.535 GHz. The fabricated Doherty PA exhibits an average output power of 25.5 dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95 GHz. The fabricated chip size is smaller than 1 mm2. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
KW - Heterojunction bipolar transistor
KW - Mobile communication
KW - Power amplifier
UR - http://www.scopus.com/inward/record.url?scp=85072724766&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072724766&partnerID=8YFLogxK
U2 - 10.1587/transele.2019MMP0007
DO - 10.1587/transele.2019MMP0007
M3 - Article
AN - SCOPUS:85072724766
VL - E102C
SP - 699
EP - 706
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
SN - 0916-8524
IS - 10
ER -