Abstract
This paper presents high efficiency Class-E and compact Doherty power amplifiers (PAs) with novel harmonics termination for handset applications using a GaAs/InGaP heterojunction bipolar transistor (HBT) process. The novel harmonics termination circuit effectively reduces the insertion loss of the matching circuit, allowing a device with a compact size. The Doherty PA uses a lumped-element transformer which consists of metal-insulator-metal (MIM) capacitors on an IC substrate, a bonding-wire inductor and short micro-strip lines on a printed circuit board (PCB). The fabricated Class-E PA exhibits a power added efficiency (PAE) as high as 69.0% at 1.95 GHz and as high as 67.6% at 2.535 GHz. The fabricated Doherty PA exhibits an average output power of 25.5 dBm and a PAE as high as 50.1% under a 10-MHz band width quadrature phase shift keying (QPSK) 6.16-dB peak-to-average-power-ratio (PAPR) LTE signal at 1.95 GHz. The fabricated chip size is smaller than 1 mm2. The input and output Doherty transformer areas are 0.5 mm by 1.0 mm and 0.7 mm by 0.7 mm, respectively.
Original language | English |
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Pages (from-to) | 699-706 |
Number of pages | 8 |
Journal | IEICE Transactions on Electronics |
Volume | E102C |
Issue number | 10 |
DOIs | |
Publication status | Published - 2019 Jan 1 |
Keywords
- Heterojunction bipolar transistor
- Mobile communication
- Power amplifier
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering