High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode

H. Fukano, Y. Muramoto, Kiyoto Takahata, Y. Matsuoka

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

A high-efficiency uni-travelling carrier (UTC) photodiode was developed using an edge-illuminated refracting-facet photodiode (RFPD) structure. The fabricated UTC-RFPD exhibited a maximum responsivity as high as 0.48 A/W even with a 280-nm-thin absorption layer, and a high output peak-to-peak voltage of 1.5 V at 40 Gbit/s.

Original languageEnglish
Pages (from-to)1664-1665
Number of pages2
JournalElectronics Letters
Volume35
Issue number19
DOIs
Publication statusPublished - 1999 Sep 16
Externally publishedYes

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Photodiodes
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode. / Fukano, H.; Muramoto, Y.; Takahata, Kiyoto; Matsuoka, Y.

In: Electronics Letters, Vol. 35, No. 19, 16.09.1999, p. 1664-1665.

Research output: Contribution to journalArticle

Fukano, H. ; Muramoto, Y. ; Takahata, Kiyoto ; Matsuoka, Y. / High efficiency edge-illuminated uni-travelling-carrier-structure refracting-facet photodiode. In: Electronics Letters. 1999 ; Vol. 35, No. 19. pp. 1664-1665.
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