High efficiency four-phase all PMOS charge pump without body effects

Na Li, Zhangcai Huang, Minglu Jiang, Yasuaki Inoue

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    15 Citations (Scopus)

    Abstract

    In this paper, a four-phase all PMOS charge pump based on the voltage doubler structure is proposed. The proposed charge pump is designed in 1.8V 0.18μm standard CMOS process with high voltage boosting efficiency and little output ripple. Moreover, it solves the voltage overstress problem which exists in the conventional charge pump and eliminates the body effect as well by means of adding two auxiliary substrate switching PMOS transistors. The simulation results show that the proposed charge pump circuits have an improvement about 93.2% compared with the original two-phase Dickson charge pump and an improvement about 28.2% compared with the negative four-phase Dickson charge pump when the supply voltage is 1.8V. Moreover it can even work as long as the supply power voltage is larger than the threshold voltage, which makes it quite suitable to be utilized in low supply voltage applications.

    Original languageEnglish
    Title of host publication2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008
    Pages1083-1087
    Number of pages5
    DOIs
    Publication statusPublished - 2008
    Event2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008 - Xiamen, Fujian Province
    Duration: 2008 May 252008 May 27

    Other

    Other2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008
    CityXiamen, Fujian Province
    Period08/5/2508/5/27

    Fingerprint

    Pumps
    Electric potential
    Charge pump circuits
    Threshold voltage
    Transistors
    Substrates

    ASJC Scopus subject areas

    • Computer Networks and Communications
    • Hardware and Architecture
    • Control and Systems Engineering
    • Electrical and Electronic Engineering

    Cite this

    Li, N., Huang, Z., Jiang, M., & Inoue, Y. (2008). High efficiency four-phase all PMOS charge pump without body effects. In 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008 (pp. 1083-1087). [4657956] https://doi.org/10.1109/ICCCAS.2008.4657956

    High efficiency four-phase all PMOS charge pump without body effects. / Li, Na; Huang, Zhangcai; Jiang, Minglu; Inoue, Yasuaki.

    2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008. 2008. p. 1083-1087 4657956.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Li, N, Huang, Z, Jiang, M & Inoue, Y 2008, High efficiency four-phase all PMOS charge pump without body effects. in 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008., 4657956, pp. 1083-1087, 2008 International Conference on Communications, Circuits and Systems, ICCCAS 2008, Xiamen, Fujian Province, 08/5/25. https://doi.org/10.1109/ICCCAS.2008.4657956
    Li N, Huang Z, Jiang M, Inoue Y. High efficiency four-phase all PMOS charge pump without body effects. In 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008. 2008. p. 1083-1087. 4657956 https://doi.org/10.1109/ICCCAS.2008.4657956
    Li, Na ; Huang, Zhangcai ; Jiang, Minglu ; Inoue, Yasuaki. / High efficiency four-phase all PMOS charge pump without body effects. 2008 International Conference on Communications, Circuits and Systems Proceedings, ICCCAS 2008. 2008. pp. 1083-1087
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