High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems

Toshihiko Yoshimasu, Noriyuki Tanba, Shinji Hara

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A heterojunction bipolar transistor (HBT) MMIC linear power amplifier is demonstrated for the 1.9 GHz Japanese Personal Handly Phone utilizing the π/4 DQPSK modulation technique. At an operating voltage of only 3 V, an output power of 21 dBm and a power added efficiency of 35% are obtained along with a modulation vector error of 4.5% and an adjacent channel interference of -60 dBc in +/- kHz offset frequency bands.

Original languageEnglish
Pages (from-to)65-67
Number of pages3
JournalIEEE Microwave and Guided Wave Letters
Volume4
Issue number3
DOIs
Publication statusPublished - 1994 Mar
Externally publishedYes

Fingerprint

linear amplifiers
Personal communication systems
Monolithic microwave integrated circuits
Heterojunction bipolar transistors
ultrahigh frequencies
power amplifiers
bipolar transistors
Power amplifiers
telecommunication
heterojunctions
Modulation
modulation
power efficiency
Frequency bands
interference
output
Electric potential
electric potential

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems. / Yoshimasu, Toshihiko; Tanba, Noriyuki; Hara, Shinji.

In: IEEE Microwave and Guided Wave Letters, Vol. 4, No. 3, 03.1994, p. 65-67.

Research output: Contribution to journalArticle

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