@inproceedings{16f1f7a0665f4009a7759c05648d835d,
title = "High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier",
abstract = "A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.",
keywords = "GaAs-based pHEMT amplifier, UTC-PD, high conversion gain, high power, linearity, zero bias",
author = "T. Umezawa and K. Katshima and A. Kanno and K. Akahane and A. Matsumoto and N. Yamamoto and T. Kawanishi",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX ; Conference date: 15-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2209735",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Sadwick, {Laurence P.} and Tianxin Yang",
booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX",
}