Abstract
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
| Original language | English |
|---|---|
| Title of host publication | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX |
| Publisher | SPIE |
| Volume | 9747 |
| ISBN (Electronic) | 9781628419825 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX - San Francisco, United States Duration: 2016 Feb 15 → 2016 Feb 18 |
Other
| Other | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 16/2/15 → 16/2/18 |
Fingerprint
Keywords
- GaAs-based pHEMT amplifier
- high conversion gain
- high power
- linearity
- UTC-PD
- zero bias
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. / Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, Tetsuya.
Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. Vol. 9747 SPIE, 2016. 97470D.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier
AU - Umezawa, T.
AU - Katshima, K.
AU - Kanno, A.
AU - Akahane, K.
AU - Matsumoto, A.
AU - Yamamoto, N.
AU - Kawanishi, Tetsuya
PY - 2016
Y1 - 2016
N2 - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
AB - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
KW - GaAs-based pHEMT amplifier
KW - high conversion gain
KW - high power
KW - linearity
KW - UTC-PD
KW - zero bias
UR - http://www.scopus.com/inward/record.url?scp=84982296283&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982296283&partnerID=8YFLogxK
U2 - 10.1117/12.2209735
DO - 10.1117/12.2209735
M3 - Conference contribution
AN - SCOPUS:84982296283
VL - 9747
BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
PB - SPIE
ER -