High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

T. Umezawa, K. Katshima, A. Kanno, K. Akahane, A. Matsumoto, N. Yamamoto, Tetsuya Kawanishi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

    Original languageEnglish
    Title of host publicationTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
    PublisherSPIE
    Volume9747
    ISBN (Electronic)9781628419825
    DOIs
    Publication statusPublished - 2016
    EventTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX - San Francisco, United States
    Duration: 2016 Feb 152016 Feb 18

    Other

    OtherTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
    CountryUnited States
    CitySan Francisco
    Period16/2/1516/2/18

    Fingerprint

    transistor amplifiers
    Photodiode
    High electron mobility transistors
    Photodiodes
    high electron mobility transistors
    Power Consumption
    photodiodes
    High Efficiency
    Electric power utilization
    modules
    Electron
    Module
    Coplanar
    Connector
    Coplanar waveguides
    connectors
    Coaxial
    Gallium Arsenide
    Frequency Response
    Insertion losses

    Keywords

    • GaAs-based pHEMT amplifier
    • high conversion gain
    • high power
    • linearity
    • UTC-PD
    • zero bias

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Computer Science Applications
    • Applied Mathematics
    • Electrical and Electronic Engineering

    Cite this

    Umezawa, T., Katshima, K., Kanno, A., Akahane, K., Matsumoto, A., Yamamoto, N., & Kawanishi, T. (2016). High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. In Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX (Vol. 9747). [97470D] SPIE. https://doi.org/10.1117/12.2209735

    High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. / Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, Tetsuya.

    Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. Vol. 9747 SPIE, 2016. 97470D.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Umezawa, T, Katshima, K, Kanno, A, Akahane, K, Matsumoto, A, Yamamoto, N & Kawanishi, T 2016, High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. in Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. vol. 9747, 97470D, SPIE, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, San Francisco, United States, 16/2/15. https://doi.org/10.1117/12.2209735
    Umezawa T, Katshima K, Kanno A, Akahane K, Matsumoto A, Yamamoto N et al. High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. In Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. Vol. 9747. SPIE. 2016. 97470D https://doi.org/10.1117/12.2209735
    Umezawa, T. ; Katshima, K. ; Kanno, A. ; Akahane, K. ; Matsumoto, A. ; Yamamoto, N. ; Kawanishi, Tetsuya. / High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. Vol. 9747 SPIE, 2016.
    @inproceedings{16f1f7a0665f4009a7759c05648d835d,
    title = "High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier",
    abstract = "A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.",
    keywords = "GaAs-based pHEMT amplifier, high conversion gain, high power, linearity, UTC-PD, zero bias",
    author = "T. Umezawa and K. Katshima and A. Kanno and K. Akahane and A. Matsumoto and N. Yamamoto and Tetsuya Kawanishi",
    year = "2016",
    doi = "10.1117/12.2209735",
    language = "English",
    volume = "9747",
    booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX",
    publisher = "SPIE",
    address = "United States",

    }

    TY - GEN

    T1 - High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

    AU - Umezawa, T.

    AU - Katshima, K.

    AU - Kanno, A.

    AU - Akahane, K.

    AU - Matsumoto, A.

    AU - Yamamoto, N.

    AU - Kawanishi, Tetsuya

    PY - 2016

    Y1 - 2016

    N2 - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

    AB - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

    KW - GaAs-based pHEMT amplifier

    KW - high conversion gain

    KW - high power

    KW - linearity

    KW - UTC-PD

    KW - zero bias

    UR - http://www.scopus.com/inward/record.url?scp=84982296283&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84982296283&partnerID=8YFLogxK

    U2 - 10.1117/12.2209735

    DO - 10.1117/12.2209735

    M3 - Conference contribution

    VL - 9747

    BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX

    PB - SPIE

    ER -