Abstract
A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.
Original language | English |
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Title of host publication | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX |
Publisher | SPIE |
Volume | 9747 |
ISBN (Electronic) | 9781628419825 |
DOIs | |
Publication status | Published - 2016 |
Event | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX - San Francisco, United States Duration: 2016 Feb 15 → 2016 Feb 18 |
Other
Other | Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX |
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Country | United States |
City | San Francisco |
Period | 16/2/15 → 16/2/18 |
Keywords
- GaAs-based pHEMT amplifier
- high conversion gain
- high power
- linearity
- UTC-PD
- zero bias
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering