High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

T. Umezawa; K. Katshima; A. Kanno; K. Akahane; A. Matsumoto; N. Yamamoto; Tetsuya Kawanishi

doi:10.1117/12.2209735

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

T. Umezawa, K. Katshima, A. Kanno, K. Akahane, A. Matsumoto, N. Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

Original language	English
Title of host publication	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
Publisher	SPIE
Volume	9747
ISBN (Electronic)	9781628419825
DOIs	https://doi.org/10.1117/12.2209735
Publication status	Published - 2016
Event	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX - San Francisco, United States Duration: 2016 Feb 15 → 2016 Feb 18

Other

Other	Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX
Country	United States
City	San Francisco
Period	16/2/15 → 16/2/18

Keywords

GaAs-based pHEMT amplifier
high conversion gain
high power
linearity
UTC-PD
zero bias

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

Umezawa, T., Katshima, K., Kanno, A., Akahane, K., Matsumoto, A., Yamamoto, N., & Kawanishi, T. (2016). High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. In Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX (Vol. 9747). [97470D] SPIE. https://doi.org/10.1117/12.2209735

High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. / Umezawa, T.; Katshima, K.; Kanno, A.; Akahane, K.; Matsumoto, A.; Yamamoto, N.; Kawanishi, Tetsuya.

Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. Vol. 9747 SPIE, 2016. 97470D.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Umezawa, T, Katshima, K, Kanno, A, Akahane, K, Matsumoto, A, Yamamoto, N & Kawanishi, T 2016, High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier. in Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX. vol. 9747, 97470D, SPIE, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX, San Francisco, United States, 16/2/15. https://doi.org/10.1117/12.2209735

@inproceedings{16f1f7a0665f4009a7759c05648d835d,

title = "High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier",

abstract = "A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.",

keywords = "GaAs-based pHEMT amplifier, high conversion gain, high power, linearity, UTC-PD, zero bias",

author = "T. Umezawa and K. Katshima and A. Kanno and K. Akahane and A. Matsumoto and N. Yamamoto and Tetsuya Kawanishi",

year = "2016",

doi = "10.1117/12.2209735",

language = "English",

volume = "9747",

booktitle = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX",

publisher = "SPIE",

address = "United States",

note = "Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX ; Conference date: 15-02-2016 Through 18-02-2016",

}

TY - GEN

T1 - High-efficiency W-band hybrid integrated photoreceiver module using UTC-PD and pHEMT amplifier

AU - Umezawa, T.

AU - Katshima, K.

AU - Kanno, A.

AU - Akahane, K.

AU - Matsumoto, A.

AU - Yamamoto, N.

AU - Kawanishi, Tetsuya

PY - 2016

Y1 - 2016

N2 - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

AB - A 100-GHz narrowband photoreceiver module integrated with a zero-bias operational uni-traveling-carrier photodiode (UTC-PD) and a GaAs-based pseudomorphic high-electron-mobility transistor (pHEMT) amplifier was fabricated and characterized. Both devices exhibited flat frequency response and outstanding overall performance. The UTC-PD showed a 3-dB bandwidth beyond 110 GHz while the pHEMT amplifier featured low power consumption and a gain of 24 dB over the 85-100 GHz range. A butterfly metal package equipped with a 1.0 mm (W) coaxial connector and a microstrip-coplanar waveguide conversion substrate was designed for low insertion loss and low return loss. The fabricated photoreceiver module demonstrated high conversion gain, a maximum output power of +9.5 dBm at 96 GHz, and DC-power consumption of 0.21 W.

KW - GaAs-based pHEMT amplifier

KW - high conversion gain

KW - high power

KW - linearity

KW - UTC-PD

KW - zero bias

UR - http://www.scopus.com/inward/record.url?scp=84982296283&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982296283&partnerID=8YFLogxK

U2 - 10.1117/12.2209735

DO - 10.1117/12.2209735

M3 - Conference contribution

AN - SCOPUS:84982296283

VL - 9747

BT - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX

PB - SPIE

T2 - Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications IX

Y2 - 15 February 2016 through 18 February 2016

ER -