Abstract
Ultrasonic in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials as shown in Table I. In a photoacoustic imaging, PVDF are usually used for ultrasonic transducers in the 10-50 MHz band. However, their electromechanical coupling coefficient kt 2 of 4% is not enough for the practical uses. To excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to fabricate such a thick piezoelectric film without a crack caused by the internal stress during the deposition. A film deposition technique can realize the piezoelectric layer on a complicated surface such as curved or concave surface, which is difficult in the case of the single crystal plate. In this study, we demonstrated high efficient 81 MHz ultrasonic generation by using 43 μm extremely thick ScAlN films.
| Original language | English |
|---|---|
| Title of host publication | 2017 IEEE International Ultrasonics Symposium, IUS 2017 |
| Publisher | IEEE Computer Society |
| ISBN (Electronic) | 9781538633830 |
| DOIs | |
| Publication status | Published - 2017 Oct 31 |
| Event | 2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States Duration: 2017 Sep 6 → 2017 Sep 9 |
Other
| Other | 2017 IEEE International Ultrasonics Symposium, IUS 2017 |
|---|---|
| Country | United States |
| City | Washington |
| Period | 17/9/6 → 17/9/9 |
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ASJC Scopus subject areas
- Acoustics and Ultrasonics
Cite this
High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. / Sano, Ko Hei; Karasawa, Rei; Yanagitani, Takahiko.
2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092425.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz
AU - Sano, Ko Hei
AU - Karasawa, Rei
AU - Yanagitani, Takahiko
PY - 2017/10/31
Y1 - 2017/10/31
N2 - Ultrasonic in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials as shown in Table I. In a photoacoustic imaging, PVDF are usually used for ultrasonic transducers in the 10-50 MHz band. However, their electromechanical coupling coefficient kt 2 of 4% is not enough for the practical uses. To excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to fabricate such a thick piezoelectric film without a crack caused by the internal stress during the deposition. A film deposition technique can realize the piezoelectric layer on a complicated surface such as curved or concave surface, which is difficult in the case of the single crystal plate. In this study, we demonstrated high efficient 81 MHz ultrasonic generation by using 43 μm extremely thick ScAlN films.
AB - Ultrasonic in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials as shown in Table I. In a photoacoustic imaging, PVDF are usually used for ultrasonic transducers in the 10-50 MHz band. However, their electromechanical coupling coefficient kt 2 of 4% is not enough for the practical uses. To excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to fabricate such a thick piezoelectric film without a crack caused by the internal stress during the deposition. A film deposition technique can realize the piezoelectric layer on a complicated surface such as curved or concave surface, which is difficult in the case of the single crystal plate. In this study, we demonstrated high efficient 81 MHz ultrasonic generation by using 43 μm extremely thick ScAlN films.
UR - http://www.scopus.com/inward/record.url?scp=85039454544&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85039454544&partnerID=8YFLogxK
U2 - 10.1109/ULTSYM.2017.8092425
DO - 10.1109/ULTSYM.2017.8092425
M3 - Conference contribution
AN - SCOPUS:85039454544
BT - 2017 IEEE International Ultrasonics Symposium, IUS 2017
PB - IEEE Computer Society
ER -