High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz

Ko Hei Sano, Rei Karasawa, Takahiko Yanagitani

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    3 Citations (Scopus)

    Abstract

    Ultrasonic transducers in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials. PVDF are usually used for ultrasonic transducers in the 10-50 MHz ranges. However, their electromechanical coupling coefficient kt 2 of 4% is not enough for the practical uses. In order to excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to grow such a thick piezoelectric film without a crack caused by the internal stress during the PVD deposition technique. We achieved stress free film growth by employing the unique hot cathode sputtering technique without heating substrate. We demonstrated high efficient 81 MHz (kt 2=18.5%) and 43 MHz (kt 2=11.9%) ultrasonic generation by using the 43 μm and 90 μm extremely thick ScAlN(Sc:39%) films, respectively.

    Original languageEnglish
    Title of host publication2017 IEEE International Ultrasonics Symposium, IUS 2017
    PublisherIEEE Computer Society
    ISBN (Electronic)9781538633830
    DOIs
    Publication statusPublished - 2017 Oct 31
    Event2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States
    Duration: 2017 Sep 62017 Sep 9

    Other

    Other2017 IEEE International Ultrasonics Symposium, IUS 2017
    CountryUnited States
    CityWashington
    Period17/9/617/9/9

    Fingerprint

    transducers
    ultrasonics
    low frequencies
    coefficients
    hot cathodes
    coupling coefficients
    residual stress
    cracks
    sputtering
    frequency ranges
    heating

    Keywords

    • ScAlN
    • Thick piezoelectric film
    • Ultrasonic transducers

    ASJC Scopus subject areas

    • Acoustics and Ultrasonics

    Cite this

    Sano, K. H., Karasawa, R., & Yanagitani, T. (2017). High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. In 2017 IEEE International Ultrasonics Symposium, IUS 2017 [8092005] IEEE Computer Society. https://doi.org/10.1109/ULTSYM.2017.8092005

    High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. / Sano, Ko Hei; Karasawa, Rei; Yanagitani, Takahiko.

    2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017. 8092005.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Sano, KH, Karasawa, R & Yanagitani, T 2017, High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. in 2017 IEEE International Ultrasonics Symposium, IUS 2017., 8092005, IEEE Computer Society, 2017 IEEE International Ultrasonics Symposium, IUS 2017, Washington, United States, 17/9/6. https://doi.org/10.1109/ULTSYM.2017.8092005
    Sano, Ko Hei ; Karasawa, Rei ; Yanagitani, Takahiko. / High electromechanical coefficient kt 2=19% thick ScAlN piezoelectric films for ultrasonic transducer in low frequency of 80 MHz. 2017 IEEE International Ultrasonics Symposium, IUS 2017. IEEE Computer Society, 2017.
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    abstract = "Ultrasonic transducers in the frequency ranges of 20-100 MHz is not well-developed because of less applications or less suitable piezoelectric materials. PVDF are usually used for ultrasonic transducers in the 10-50 MHz ranges. However, their electromechanical coupling coefficient kt 2 of 4{\%} is not enough for the practical uses. In order to excite ultrasonic in the 20-100 MHz, 125 μm-25 μm thick piezoelectric film is required. It is difficult to grow such a thick piezoelectric film without a crack caused by the internal stress during the PVD deposition technique. We achieved stress free film growth by employing the unique hot cathode sputtering technique without heating substrate. We demonstrated high efficient 81 MHz (kt 2=18.5{\%}) and 43 MHz (kt 2=11.9{\%}) ultrasonic generation by using the 43 μm and 90 μm extremely thick ScAlN(Sc:39{\%}) films, respectively.",
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    AU - Sano, Ko Hei

    AU - Karasawa, Rei

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