High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

K. Harada, Y. Makita, H. Shibata, B. Lo, A. C. Beye, M. P. Halsall, S. Kimura, Naoto Kobayashi, T. Iida, T. Shima, A. Obara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg + into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N A-N D| greater than 2×10 17 cm -3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages835-840
Number of pages6
Volume396
Publication statusPublished - 1996
Externally publishedYes

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Ion implantation
Hole concentration
Crystal growth from melt
Rapid thermal annealing
Liquids
Electron transitions
Conduction bands
Photoluminescence
Furnaces
Demonstrations
Optical properties
Activation energy
Heat treatment
Annealing
Impurities
Mercury
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Harada, K., Makita, Y., Shibata, H., Lo, B., Beye, A. C., Halsall, M. P., ... Obara, A. (1996). High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands. In Materials Research Society Symposium - Proceedings (Vol. 396, pp. 835-840). Materials Research Society.

High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs : formation of new shallow emission bands. / Harada, K.; Makita, Y.; Shibata, H.; Lo, B.; Beye, A. C.; Halsall, M. P.; Kimura, S.; Kobayashi, Naoto; Iida, T.; Shima, T.; Obara, A.

Materials Research Society Symposium - Proceedings. Vol. 396 Materials Research Society, 1996. p. 835-840.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Harada, K, Makita, Y, Shibata, H, Lo, B, Beye, AC, Halsall, MP, Kimura, S, Kobayashi, N, Iida, T, Shima, T & Obara, A 1996, High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands. in Materials Research Society Symposium - Proceedings. vol. 396, Materials Research Society, pp. 835-840.
Harada K, Makita Y, Shibata H, Lo B, Beye AC, Halsall MP et al. High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands. In Materials Research Society Symposium - Proceedings. Vol. 396. Materials Research Society. 1996. p. 835-840
Harada, K. ; Makita, Y. ; Shibata, H. ; Lo, B. ; Beye, A. C. ; Halsall, M. P. ; Kimura, S. ; Kobayashi, Naoto ; Iida, T. ; Shima, T. ; Obara, A. / High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs : formation of new shallow emission bands. Materials Research Society Symposium - Proceedings. Vol. 396 Materials Research Society, 1996. pp. 835-840
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AU - Shibata, H.

AU - Lo, B.

AU - Beye, A. C.

AU - Halsall, M. P.

AU - Kimura, S.

AU - Kobayashi, Naoto

AU - Iida, T.

AU - Shima, T.

AU - Obara, A.

PY - 1996

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AB - Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg + into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |N A-N D| greater than 2×10 17 cm -3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

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