High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

K. Harada, Y. Makita, H. Shibata, B. Lo, A. C. Beye, M. P. Halsall, S. Kimura, Naoto Kobayashi, T. Iida, T. Shima, A. Obara

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Engineering & Materials Science

Chemical Compounds