High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N

J. I. Hwang, Y. Ishida, M. Kobayashi, H. Hirata, K. Takubo, Takashi Mizokawa, A. Fujimori, J. Okamoto, K. Mamiya, Y. Saito, Y. Muramatsu, H. Ott, A. Tanaka, T. Kondo, H. Munekata

Research output: Contribution to journalArticle

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Abstract

We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

Original languageEnglish
Article number085216
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
Publication statusPublished - 2005 Aug 15
Externally publishedYes

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x ray absorption
Nitrides
Electronic structure
nitrides
electronic structure
X rays
Exchange coupling
Core levels
Photoemission
Fermi level
Absorption spectroscopy
x ray spectroscopy
configuration interaction
crystal field theory
absorption spectroscopy
Energy gap
photoelectric emission
Doping (additives)
Ions
valence

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N. / Hwang, J. I.; Ishida, Y.; Kobayashi, M.; Hirata, H.; Takubo, K.; Mizokawa, Takashi; Fujimori, A.; Okamoto, J.; Mamiya, K.; Saito, Y.; Muramatsu, Y.; Ott, H.; Tanaka, A.; Kondo, T.; Munekata, H.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 8, 085216, 15.08.2005.

Research output: Contribution to journalArticle

Hwang, JI, Ishida, Y, Kobayashi, M, Hirata, H, Takubo, K, Mizokawa, T, Fujimori, A, Okamoto, J, Mamiya, K, Saito, Y, Muramatsu, Y, Ott, H, Tanaka, A, Kondo, T & Munekata, H 2005, 'High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 8, 085216. https://doi.org/10.1103/PhysRevB.72.085216
Hwang, J. I. ; Ishida, Y. ; Kobayashi, M. ; Hirata, H. ; Takubo, K. ; Mizokawa, Takashi ; Fujimori, A. ; Okamoto, J. ; Mamiya, K. ; Saito, Y. ; Muramatsu, Y. ; Ott, H. ; Tanaka, A. ; Kondo, T. ; Munekata, H. / High-energy spectroscopic study of the III-V nitride-based diluted magnetic semiconductor Ga1-x Mnx N. In: Physical Review B - Condensed Matter and Materials Physics. 2005 ; Vol. 72, No. 8.
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AU - Ishida, Y.

AU - Kobayashi, M.

AU - Hirata, H.

AU - Takubo, K.

AU - Mizokawa, Takashi

AU - Fujimori, A.

AU - Okamoto, J.

AU - Mamiya, K.

AU - Saito, Y.

AU - Muramatsu, Y.

AU - Ott, H.

AU - Tanaka, A.

AU - Kondo, T.

AU - Munekata, H.

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AB - We have studied the electronic structure of the diluted magnetic semiconductor Ga1-x Mnx N (x=0.0, 0.02, and 0.042) grown on Sn-doped n -type GaN using photoemission and soft x-ray absorption spectroscopy. Mn L -edge x-ray absorption have indicated that the Mn ions are in the tetrahedral crystal field and that their valence is divalent. Upon Mn doping into GaN, new states were found to form within the band gap of GaN, and the Fermi level was shifted downward. Satellite structures in the Mn 2p core level and the Mn 3d partial density of states were analyzed using configuration-interaction calculation on a Mn N4 cluster model. The deduced electronic structure parameters reveal that the p-d exchange coupling in Ga1-x Mnx N is stronger than that in Ga1-x Mnx As.

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