High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, Toshihiro Kawano, A. Takai

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

Original languageEnglish
Pages (from-to)580-582
Number of pages3
JournalIEEE Photonics Technology Letters
Volume4
Issue number6
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Electroabsorption modulators
Distributed feedback lasers
Metallorganic chemical vapor deposition
threshold currents
Power control
metalorganic chemical vapor deposition
modulators
extinction
Energy gap
lasers
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique. / Aoki, M.; Takahashi, M.; Suzuki, M.; Sano, H.; Uomi, K.; Kawano, Toshihiro; Takai, A.

In: IEEE Photonics Technology Letters, Vol. 4, No. 6, 1992, p. 580-582.

Research output: Contribution to journalArticle

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