High-Extinction-Ratio MQW Electroabsorption-Modulator Integrated DFB Laser Fabricated by In-Plane Bandgap Energy Control Technique

M. Aoki, M. Takahashi, M. Suzuki, H. Sano, K. Uomi, T. Kawano, A. Takai

Research output: Contribution to journalArticle

40 Citations (Scopus)


local bandgap energy of an InGaAs/InGaAsP MQW structure was precisely adjusted by in-plane Eg control in one-step selective area MOCVD growth. The technique was then applied to an MQW electroabsorption modulator integrated DFB laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.

Original languageEnglish
Pages (from-to)580-582
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 1992 Jun


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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