TY - GEN
T1 - High field properties of polyether-ether-ketone
AU - Ohishi, Kenji
AU - Hirai, Tomoo
AU - Tanaka, Yasuhiro
AU - Ohki, Yoshimichi
PY - 1991/12/1
Y1 - 1991/12/1
N2 - The mechanism of electrical conduction in PEEK (polyether-ether-ketone) was studied from the results of DC conduction and thermal pulse current (TPC) measurements. The DC conduction current in PEEK films was measured at various electric fields at room temperature. From the results of electric-field dependence, it is thought that the conduction mechanism in PEEK is due to hopping. The TPC spectra, which were obtained under short-circuit conditions after the application of various voltages, show the existence of heterospace charges near the two electrodes. The TPC spectra increase with an increase in the electric field applied. From these results, it is thought that the electrical conduction in PEEK is due to carrier hopping. The carriers reached near the counterelectrode are not easily neutralized and begin to form heterocharges.
AB - The mechanism of electrical conduction in PEEK (polyether-ether-ketone) was studied from the results of DC conduction and thermal pulse current (TPC) measurements. The DC conduction current in PEEK films was measured at various electric fields at room temperature. From the results of electric-field dependence, it is thought that the conduction mechanism in PEEK is due to hopping. The TPC spectra, which were obtained under short-circuit conditions after the application of various voltages, show the existence of heterospace charges near the two electrodes. The TPC spectra increase with an increase in the electric field applied. From these results, it is thought that the electrical conduction in PEEK is due to carrier hopping. The carriers reached near the counterelectrode are not easily neutralized and begin to form heterocharges.
UR - http://www.scopus.com/inward/record.url?scp=0026264301&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0026264301&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0026264301
SN - 0879425687
T3 - Proc 3 Int Conf Prop Appl Dielectr Mater
SP - 1018
EP - 1020
BT - Proc 3 Int Conf Prop Appl Dielectr Mater
PB - Publ by IEEE
T2 - Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials
Y2 - 8 July 1991 through 12 July 1991
ER -