Abstract
High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
| Pages | 195-198 |
| Number of pages | 4 |
| Publication status | Published - 2001 |
| Event | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka Duration: 2001 Jun 4 → 2001 Jun 7 |
Other
| Other | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) |
|---|---|
| City | Osaka |
| Period | 01/6/4 → 01/6/7 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
High frequency application of high transconductance surface-channel diamond field-effect transistors. / Umezawa, H.; Taniuchi, H.; Arima, T.; Ishizaka, H.; Fujihara, N.; Yoshikazu; Ohba; Tachiki, M.; Kawarada, Hiroshi.
IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2001. p. 195-198.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High frequency application of high transconductance surface-channel diamond field-effect transistors
AU - Umezawa, H.
AU - Taniuchi, H.
AU - Arima, T.
AU - Ishizaka, H.
AU - Fujihara, N.
AU - Yoshikazu,
AU - Ohba,
AU - Tachiki, M.
AU - Kawarada, Hiroshi
PY - 2001
Y1 - 2001
N2 - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.
AB - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0034838161&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0034838161&partnerID=8YFLogxK
M3 - Conference contribution
SP - 195
EP - 198
BT - IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
ER -