High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Yoshikazu, Ohba, M. Tachiki, H. Kawarada

Research output: Contribution to conferencePaper

2 Citations (Scopus)

Abstract

High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

Original languageEnglish
Pages195-198
Number of pages4
Publication statusPublished - 2001 Jan 1
Event13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan
Duration: 2001 Jun 42001 Jun 7

Conference

Conference13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
CountryJapan
CityOsaka
Period01/6/401/6/7

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Umezawa, H., Taniuchi, H., Arima, T., Ishizaka, H., Fujihara, N., Yoshikazu, Ohba, Tachiki, M., & Kawarada, H. (2001). High frequency application of high transconductance surface-channel diamond field-effect transistors. 195-198. Paper presented at 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan.