High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa; H. Taniuchi; T. Arima; H. Ishizaka; N. Fujihara; Yoshikazu; Ohba; M. Tachiki; H. Kawarada

High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Yoshikazu, Ohba, M. Tachiki, H. Kawarada

School of Fundamental Science and Engineering

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (f_T) and maximum oscillation frequency (f_max) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (C_GS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher f_T of 4.8 GHz and f_max of 11 GHz in spite of comparatively low transconductance. The f_T of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

Original language	English
Pages	195-198
Number of pages	4
Publication status	Published - 2001 Jan 1
Event	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 2001 Jun 4 → 2001 Jun 7

Conference

Conference	13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
Country	Japan
City	Osaka
Period	01/6/4 → 01/6/7

ASJC Scopus subject areas

Electrical and Electronic Engineering

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High frequency application of high transconductance surface-channel diamond field-effect transistors. / Umezawa, H.; Taniuchi, H.; Arima, T.; Ishizaka, H.; Fujihara, N.; Yoshikazu; Ohba; Tachiki, M.; Kawarada, H.

2001. 195-198 Paper presented at 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan.

Research output: Contribution to conference › Paper › peer-review

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abstract = "High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.",

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T1 - High frequency application of high transconductance surface-channel diamond field-effect transistors

AU - Umezawa, H.

AU - Taniuchi, H.

AU - Arima, T.

AU - Ishizaka, H.

AU - Fujihara, N.

AU - Yoshikazu,

AU - Ohba,

AU - Tachiki, M.

AU - Kawarada, H.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

AB - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

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High frequency application of high transconductance surface-channel diamond field-effect transistors

Abstract

Conference

ASJC Scopus subject areas

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