High frequency application of high transconductance surface-channel diamond field-effect transistors

H. Umezawa, H. Taniuchi, T. Arima, H. Ishizaka, N. Fujihara, Yoshikazu, Ohba, M. Tachiki, Hiroshi Kawarada

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

    Original languageEnglish
    Title of host publicationIEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    Pages195-198
    Number of pages4
    Publication statusPublished - 2001
    Event13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka
    Duration: 2001 Jun 42001 Jun 7

    Other

    Other13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
    CityOsaka
    Period01/6/401/6/7

    Fingerprint

    Transconductance
    Field effect transistors
    Diamonds
    MESFET devices
    Management information systems
    Cutoff frequency
    Capacitance
    Hydrogen

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

    Cite this

    Umezawa, H., Taniuchi, H., Arima, T., Ishizaka, H., Fujihara, N., Yoshikazu, ... Kawarada, H. (2001). High frequency application of high transconductance surface-channel diamond field-effect transistors. In IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (pp. 195-198)

    High frequency application of high transconductance surface-channel diamond field-effect transistors. / Umezawa, H.; Taniuchi, H.; Arima, T.; Ishizaka, H.; Fujihara, N.; Yoshikazu; Ohba; Tachiki, M.; Kawarada, Hiroshi.

    IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2001. p. 195-198.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Umezawa, H, Taniuchi, H, Arima, T, Ishizaka, H, Fujihara, N, Yoshikazu, Ohba, Tachiki, M & Kawarada, H 2001, High frequency application of high transconductance surface-channel diamond field-effect transistors. in IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). pp. 195-198, 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, 01/6/4.
    Umezawa H, Taniuchi H, Arima T, Ishizaka H, Fujihara N, Yoshikazu et al. High frequency application of high transconductance surface-channel diamond field-effect transistors. In IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2001. p. 195-198
    Umezawa, H. ; Taniuchi, H. ; Arima, T. ; Ishizaka, H. ; Fujihara, N. ; Yoshikazu ; Ohba ; Tachiki, M. ; Kawarada, Hiroshi. / High frequency application of high transconductance surface-channel diamond field-effect transistors. IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD). 2001. pp. 195-198
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    AU - Umezawa, H.

    AU - Taniuchi, H.

    AU - Arima, T.

    AU - Ishizaka, H.

    AU - Fujihara, N.

    AU - Yoshikazu,

    AU - Ohba,

    AU - Tachiki, M.

    AU - Kawarada, Hiroshi

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    AB - High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.

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