Abstract
High frequency operations of diamond field-effect transistors (FETs) on the hydrogen-terminated surface channel are realized for the first time. The cut-off frequency (fT) and maximum oscillation frequency (fmax) of surface-channel diamond metal-semiconductor (MES) FET will, 2 μm gate length are 2.2 and 7 GHz respectively. Due to the effect of gate insulator insertion, the source-gate capacitance (CGS) of surface-channel diamond (MIS) FET is reduced as half as that of diamond MESFETs. The 1 μm gate MISFET shows higher fT of 4.8 GHz and fmax of 11 GHz in spite of comparatively low transconductance. The fT of more than 20 GHz is expected at 0.5μm gate MISFET, because transconductance of 90 mS/mm diamond MISFET with 1 μm gate length has been already demonstrated.
Original language | English |
---|---|
Pages | 195-198 |
Number of pages | 4 |
Publication status | Published - 2001 Jan 1 |
Event | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 2001 Jun 4 → 2001 Jun 7 |
Conference
Conference | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) |
---|---|
Country/Territory | Japan |
City | Osaka |
Period | 01/6/4 → 01/6/7 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering