High-frequency Hall coefficient for the two-dimensional Hubbard model

F. F. Assaad, M. Imada

Research output: Contribution to journalArticlepeer-review

Abstract

We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume263
Issue number1-4
DOIs
Publication statusPublished - 1996 May
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High-frequency Hall coefficient for the two-dimensional Hubbard model'. Together they form a unique fingerprint.

Cite this