Abstract
We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.
| Original language | English |
|---|---|
| Pages (from-to) | 78-81 |
| Number of pages | 4 |
| Journal | Physica C: Superconductivity and its applications |
| Volume | 263 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 1996 Jan 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
Cite this
High-frequency Hall coefficient for the two-dimensional Hubbard model. / Assaad, F. F.; Imada, Masatoshi.
In: Physica C: Superconductivity and its applications, Vol. 263, No. 1-4, 01.01.1996, p. 78-81.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-frequency Hall coefficient for the two-dimensional Hubbard model
AU - Assaad, F. F.
AU - Imada, Masatoshi
PY - 1996/1/1
Y1 - 1996/1/1
N2 - We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.
AB - We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.
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UR - http://www.scopus.com/inward/citedby.url?scp=0030147033&partnerID=8YFLogxK
U2 - 10.1016/0921-4534(96)00025-1
DO - 10.1016/0921-4534(96)00025-1
M3 - Article
VL - 263
SP - 78
EP - 81
JO - Physica C: Superconductivity and its Applications
JF - Physica C: Superconductivity and its Applications
SN - 0921-4534
IS - 1-4
ER -