High-frequency Hall coefficient for the two-dimensional Hubbard model

We numerically calculate the high-frequency Hall coefficient, R_H, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime R_H is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, R_H is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.