Abstract
We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.
Original language | English |
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Pages (from-to) | 78-81 |
Number of pages | 4 |
Journal | Physica C: Superconductivity and its applications |
Volume | 263 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 1996 May |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering