We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering