High-frequency Hall coefficient for the two-dimensional Hubbard model

F. F. Assaad, Masatoshi Imada

Research output: Contribution to journalArticle

Abstract

We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalPhysica C: Superconductivity and its applications
Volume263
Issue number1-4
DOIs
Publication statusPublished - 1996 Jan 1
Externally publishedYes

Fingerprint

Hubbard model
two dimensional models
Hall effect
Electrons
Charge carriers
Doping (additives)
Temperature
charge carriers
divergence
electrons
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

High-frequency Hall coefficient for the two-dimensional Hubbard model. / Assaad, F. F.; Imada, Masatoshi.

In: Physica C: Superconductivity and its applications, Vol. 263, No. 1-4, 01.01.1996, p. 78-81.

Research output: Contribution to journalArticle

@article{104621f944be4779a7ea8fd2dd819336,
title = "High-frequency Hall coefficient for the two-dimensional Hubbard model",
abstract = "We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.",
author = "Assaad, {F. F.} and Masatoshi Imada",
year = "1996",
month = "1",
day = "1",
doi = "10.1016/0921-4534(96)00025-1",
language = "English",
volume = "263",
pages = "78--81",
journal = "Physica C: Superconductivity and its Applications",
issn = "0921-4534",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - High-frequency Hall coefficient for the two-dimensional Hubbard model

AU - Assaad, F. F.

AU - Imada, Masatoshi

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.

AB - We numerically calculate the high-frequency Hall coefficient, RH, for the 2D Hubbard model at small hole-doping near half-filling. In the weak-coupling regime RH is electron-like and comparable to its U/t = 0 value. In the strong-coupling regime, where the mapping onto the t-J model is justified, RH is electron-like with small amplitude in the temperature regimes T > U, T < J, and hole-like in the temperature regime J < T < U. Our conclusions are consistent with the picture of a Mott transition driven by the divergence of the effective mass as opposed to the vanishing of the number of charge carriers. This conclusion is valid in the strong- and weak-coupling regimes.

UR - http://www.scopus.com/inward/record.url?scp=0030147033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030147033&partnerID=8YFLogxK

U2 - 10.1016/0921-4534(96)00025-1

DO - 10.1016/0921-4534(96)00025-1

M3 - Article

VL - 263

SP - 78

EP - 81

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - 1-4

ER -