High-Frequency InP/InGaAs Double Heterojunction Bipolar Transistors on a Si Substrate

Yutaka Matsuoka; Kenji Kurishima; Toshiki Makimoto

doi:10.1109/55.225572

High-Frequency InP/InGaAs Double Heterojunction Bipolar Transistors on a Si Substrate

Yutaka Matsuoka, Kenji Kurishima, Toshiki Makimoto

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 × 19 μm². The S parameters were measured for various bias points. In the case of I_c= 15 mA, f_Twas 59 GHz at V_CE= 1.8 V, and fmax ^was 69 GHz at V_CE = 2.3 V. Due to the InP collector, breakdown voltage was so high that a high V_CEof 3.8 V was applied for I_c = 7.5 mA in the S-parameter measurements to give an f_Tof 39 GHz and an f_max of 52 GHz.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1109/55.225572
Publication status	Published - 1993 Jul
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "High-Frequency InP/InGaAs Double Heterojunction Bipolar Transistors on a Si Substrate",

abstract = "Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 × 19 μm2. The S parameters were measured for various bias points. In the case of Ic= 15 mA, fTwas 59 GHz at VCE= 1.8 V, and fmax was 69 GHz at VCE = 2.3 V. Due to the InP collector, breakdown voltage was so high that a high VCEof 3.8 V was applied for Ic = 7.5 mA in the S-parameter measurements to give an fTof 39 GHz and an fmax of 52 GHz.",

author = "Yutaka Matsuoka and Kenji Kurishima and Toshiki Makimoto",

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T1 - High-Frequency InP/InGaAs Double Heterojunction Bipolar Transistors on a Si Substrate

AU - Matsuoka, Yutaka

AU - Kurishima, Kenji

AU - Makimoto, Toshiki

PY - 1993/7

Y1 - 1993/7

N2 - Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 × 19 μm2. The S parameters were measured for various bias points. In the case of Ic= 15 mA, fTwas 59 GHz at VCE= 1.8 V, and fmax was 69 GHz at VCE = 2.3 V. Due to the InP collector, breakdown voltage was so high that a high VCEof 3.8 V was applied for Ic = 7.5 mA in the S-parameter measurements to give an fTof 39 GHz and an fmax of 52 GHz.

AB - Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time. A current gain of 40 was obtained for a DHBT with an emitter dimension of 1.6 × 19 μm2. The S parameters were measured for various bias points. In the case of Ic= 15 mA, fTwas 59 GHz at VCE= 1.8 V, and fmax was 69 GHz at VCE = 2.3 V. Due to the InP collector, breakdown voltage was so high that a high VCEof 3.8 V was applied for Ic = 7.5 mA in the S-parameter measurements to give an fTof 39 GHz and an fmax of 52 GHz.

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High-Frequency InP/InGaAs Double Heterojunction Bipolar Transistors on a Si Substrate

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