Recently, a great deal of attention has been focused on compound semiconductor devices on Si substrates. Using Si substrates offers many advantages. Large-diameter wafers are available; thermal conductivity is much higher than on GaAs or InP substrates; and handling in the device fabrication process is easy due to the mechanical hardness of Si. Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time.
ASJC Scopus subject areas
- Electrical and Electronic Engineering