High-frequency InP/InGaAs double heterojunction bipolar transistors on a Si substrate

Yutaka Matsuoka; Kenji Kurishima; Toshiki Makimoto

doi:10.1109/55.225572

High-frequency InP/InGaAs double heterojunction bipolar transistors on a Si substrate

Yutaka Matsuoka, Kenji Kurishima, Toshiki Makimoto

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Recently, a great deal of attention has been focused on compound semiconductor devices on Si substrates. Using Si substrates offers many advantages. Large-diameter wafers are available; thermal conductivity is much higher than on GaAs or InP substrates; and handling in the device fabrication process is easy due to the mechanical hardness of Si. Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time.

Original language	English
Pages (from-to)	357-359
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	14
Issue number	7
DOIs	https://doi.org/10.1109/55.225572
Publication status	Published - 1993 Jul
Externally published	Yes

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ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Matsuoka, Y., Kurishima, K., & Makimoto, T. (1993). High-frequency InP/InGaAs double heterojunction bipolar transistors on a Si substrate. IEEE Electron Device Letters, 14(7), 357-359. https://doi.org/10.1109/55.225572

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Access to Document

10.1109/55.225572