High-frequency InP/InGaAs double heterojunction bipolar transistors on a Si substrate

Yutaka Matsuoka, Kenji Kurishima, Toshiki Makimoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Recently, a great deal of attention has been focused on compound semiconductor devices on Si substrates. Using Si substrates offers many advantages. Large-diameter wafers are available; thermal conductivity is much higher than on GaAs or InP substrates; and handling in the device fabrication process is easy due to the mechanical hardness of Si. Self-aligned high-frequency InP/InGaAs double heterojunction bipolar transistors (DHBT's) have been fabricated on a Si substrate for the first time.

Original languageEnglish
Pages (from-to)357-359
Number of pages3
JournalIEEE Electron Device Letters
Volume14
Issue number7
DOIs
Publication statusPublished - 1993 Jul
Externally publishedYes

    Fingerprint

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this