High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi; Hitoshi Umezawa; Takuya Arima; Minoru Tachiki; Hiroshi Kawarada

doi:10.1109/55.936353

High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi^*, Hitoshi Umezawa, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

96 Citations (Scopus)

Abstract

The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at V_GS = -1.5 V and V_DS = -5 V, for which a cutoff frequency f_T and a maximum oscillating frequency f_max of 2.2 GHz and 7 GHz were obtained, respectively.

Original language	English
Pages (from-to)	390-392
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	8
DOIs	https://doi.org/10.1109/55.936353
Publication status	Published - 2001 Aug

Keywords

Diamond
Hydrogen-terminated surface
MESFET
ff

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.936353

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@article{38af208f2d864a90b897096b87ec3621,

title = "High-frequency performance of diamond field-effect transistor",

abstract = "The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.",

keywords = "Diamond, Hydrogen-terminated surface, MESFET, ff",

author = "Hirotada Taniuchi and Hitoshi Umezawa and Takuya Arima and Minoru Tachiki and Hiroshi Kawarada",

note = "Funding Information: Manuscript received December 27, 2000; revised May 7, 200. This work was supported in part by Murata Science Foundation and Grant-in-Aid for General Scientific Research (10450127, 09555103, 11750269) from the Ministry of Education, Science, Sports and Culture of Japan, and also by a Waseda University Grant for Special Research Project (99A-212). The review of this letter was arranged by Editor T.-J. King.",

year = "2001",

month = aug,

doi = "10.1109/55.936353",

language = "English",

volume = "22",

pages = "390--392",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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T1 - High-frequency performance of diamond field-effect transistor

AU - Taniuchi, Hirotada

AU - Umezawa, Hitoshi

AU - Arima, Takuya

AU - Tachiki, Minoru

AU - Kawarada, Hiroshi

N1 - Funding Information: Manuscript received December 27, 2000; revised May 7, 200. This work was supported in part by Murata Science Foundation and Grant-in-Aid for General Scientific Research (10450127, 09555103, 11750269) from the Ministry of Education, Science, Sports and Culture of Japan, and also by a Waseda University Grant for Special Research Project (99A-212). The review of this letter was arranged by Editor T.-J. King.

PY - 2001/8

Y1 - 2001/8

N2 - The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

AB - The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

KW - Diamond

KW - Hydrogen-terminated surface

KW - MESFET

KW - ff

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DO - 10.1109/55.936353

M3 - Article

AN - SCOPUS:0035424142

SN - 0741-3106

VL - 22

SP - 390

EP - 392

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

High-frequency performance of diamond field-effect transistor

Abstract

Keywords

ASJC Scopus subject areas

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