High-frequency performance of diamond field-effect transistor

Hirotada Taniuchi, Hitoshi Umezawa, Takuya Arima, Minoru Tachiki, Hiroshi Kawarada

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    Abstract

    The microwave performance of a diamond metal-semiconductor field-effect transistor (MESFET) is reported for the first time. MESFETs with a gate length of 2-3 μm and a source-gate spacing of 0.1 μm were fabricated on the hydrogen-terminated surface of an undoped diamond film grown by microwave plasma chemical vapor deposition (CVD) utilizing a self-aligned gate fabrication process. A maximum transconductance of 70 mS/mm was obtained on a 2 μm gate MESFET at VGS = -1.5 V and VDS = -5 V, for which a cutoff frequency fT and a maximum oscillating frequency fmax of 2.2 GHz and 7 GHz were obtained, respectively.

    Original languageEnglish
    Pages (from-to)390-392
    Number of pages3
    JournalIEEE Electron Device Letters
    Volume22
    Issue number8
    DOIs
    Publication statusPublished - 2001 Aug

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    Keywords

    • Diamond
    • ff
    • Hydrogen-terminated surface
    • MESFET

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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