High hole concentrations in Mg-doped InGaN grown by MOVPE

Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

We investigated the electrical properties of Mg-doped InxGa1-xN (0≤x<0.25) grown by metalorganic vapor-phase epitaxy with various growth conditions, such as Mg-doping concentration, growth-rate and growth temperature. The hole concentration depends on the growth-rate, the In mole fraction and the crystal quality of the InGaN layers. The hole concentration of Mg-doped InxGa1-xN layers below x = 0.15 increased with the In mole fraction, while those above x = 0.15 decreased. We realized the p-type InGaN with the room-temperature hole concentration above 1018 cm-3 and obtained the maximum hole concentration of 7.8×1018 cm-3 for x = 0.2 by optimizing the growth conditions.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalJournal of Crystal Growth
Volume221
Issue number1-4
DOIs
Publication statusPublished - 2000 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High hole concentrations in Mg-doped InGaN grown by MOVPE'. Together they form a unique fingerprint.

  • Cite this